Fabrication of GaN nanowires on porous GaN substrate by thermal evaporation

In this research, we used an inexpensive method to fabricate highly crystalline gallium nitride (GaN) nanowires (NWs) on porous GaN (PGaN) on a Si (111) wafer by thermal evaporation using commercial GaN powder using a combination of argon and nitrogen gas atmosphere without any catalyst. Microstruct...

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Veröffentlicht in:	Materials science in semiconductor processing 2013-04, Vol.16 (2), p.485-488
Hauptverfasser:	Shekari, L., Abu Hassan, H., Thahab, S.M., Hassan, Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Catalytic methods Characterization Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Evaporation Exact sciences and technology Fabrication Gallium nitrides GaN Materials science Methods of nanofabrication Nanoscale materials and structures: fabrication and characterization Nanowires Nitrides Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Porous materials granular materials Quantum wires Scanning electron microscopy Semiconductors Specific materials Spectroscopy X-rays
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