Depth profiling of Fe-implanted Si(100) by means of X-ray reflectivity and extremely asymmetric X-ray diffraction

This article reports on surface density variations that are accompanied by ion‐beam‐induced pattern formation processes on Si. The density profiles perpendicular to Si(100) surfaces were investigated after off‐normal implantation with 5 keV Fe+ ions at fluences ranging from 1 × 1016 to 5 × 1017 ions...

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Veröffentlicht in:	Journal of applied crystallography 2013-04, Vol.46 (2), p.505-511
Hauptverfasser:	Khanbabaee, B., Biermanns, A., Facsko, S., Grenzer, J., Pietsch, U.
Format:	Artikel
Sprache:	eng
Schlagworte:	Asymmetry Crystallography Density Depth profiling Diffraction extremely asymmetric X-ray diffraction Fluence ion-beam implantation Iron Materials science nano-patterning Reflectivity Surface roughness X-ray reflectivity X-rays
Online-Zugang:	Volltext
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