A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects

A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects

The demanding task of assessing long-time interconnect reliability can only be achieved by combination of experimental and technology computer-aided design (TCAD) methods. The basis for a TCAD tool is a sophisticated physical model which takes into account the microstructural characteristics of copp...

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Veröffentlicht in:IEEE transactions on device and materials reliability 2009-03, Vol.9 (1), p.9-19
Hauptverfasser: Ceric, H., de Orio, R.L., Cervenka, J., Selberherr, S.
Format: Magazinearticle
Sprache:eng
Schlagworte:
Accelerated tests
Calibration
Circuit simulation
Circuit testing
Copper
Electromigration
Grain boundaries
Integrated circuit interconnections
Integrated circuit reliability
Integrated circuit technology
interconnect
Interconnections
layout design
Life estimation
physical modeling
reliability
simulation
Stress
Tasks
Three dimensional
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Beschreibung
Zusammenfassung:The demanding task of assessing long-time interconnect reliability can only be achieved by combination of experimental and technology computer-aided design (TCAD) methods. The basis for a TCAD tool is a sophisticated physical model which takes into account the microstructural characteristics of copper. In this paper, a general electromigration model is presented with special focus on the influence of grain boundaries and mechanical stress. The possible calibration and usage scenarios of electromigration tools are discussed. The physical soundness of the model is proved by 3-D simulations of typical dual-damascene structures used in accelerated electromigration testing.
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2008.2000893