Loss of Siloxane Monolayers from GaN Surfaces in Water
Gallium nitride, with a thin passivating layer of Ga2O3, has been functionalized with octadecyltrichlorosilane (OTS) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAMs). Water contact angles, atomic force microscopy, and X-ray photoelectron spectroscopy were used for characteriza...
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| Veröffentlicht in: | Langmuir 2013-04, Vol.29 (17), p.5145-5149 |
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| creator | Arisio, Christina Cassou, Catherine A Lieberman, Marya |
| description | Gallium nitride, with a thin passivating layer of Ga2O3, has been functionalized with octadecyltrichlorosilane (OTS) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAMs). Water contact angles, atomic force microscopy, and X-ray photoelectron spectroscopy were used for characterization of the bare and functionalized surfaces. The SAMs are stable in acetonitrile, but both the hydrophobic OTS SAM and the hydrophilic APTES SAM completely desorb after 1–24 h of immersion in water and common buffers. The concentration of gallium in solution after a clean GaN chip is immersed in water is consistent with dissolution of roughly one monolayer of interfacial gallium oxide. Dissolution of this oxide layer could account for the loss of SAMs from GaN surfaces. |
| doi_str_mv | 10.1021/la400849j |
| format | Article |
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Water contact angles, atomic force microscopy, and X-ray photoelectron spectroscopy were used for characterization of the bare and functionalized surfaces. The SAMs are stable in acetonitrile, but both the hydrophobic OTS SAM and the hydrophilic APTES SAM completely desorb after 1–24 h of immersion in water and common buffers. The concentration of gallium in solution after a clean GaN chip is immersed in water is consistent with dissolution of roughly one monolayer of interfacial gallium oxide. Dissolution of this oxide layer could account for the loss of SAMs from GaN surfaces.</description><identifier>ISSN: 0743-7463</identifier><identifier>EISSN: 1520-5827</identifier><identifier>DOI: 10.1021/la400849j</identifier><identifier>PMID: 23534848</identifier><identifier>CODEN: LANGD5</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Chemistry ; Exact sciences and technology ; Gallium - chemistry ; General and physical chemistry ; Hydrophobic and Hydrophilic Interactions ; Propylamines ; Silanes - chemistry ; Siloxanes - chemistry ; Solid-liquid interface ; Solubility ; Surface physical chemistry ; Surface Properties ; Water - chemistry</subject><ispartof>Langmuir, 2013-04, Vol.29 (17), p.5145-5149</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a345t-e9ddf90658359de8125dccf8dda941ebc06b8d09e4b2bd84136400160aa6c3763</citedby><cites>FETCH-LOGICAL-a345t-e9ddf90658359de8125dccf8dda941ebc06b8d09e4b2bd84136400160aa6c3763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/la400849j$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/la400849j$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,776,780,2752,27053,27901,27902,56713,56763</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27321557$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23534848$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Arisio, Christina</creatorcontrib><creatorcontrib>Cassou, Catherine A</creatorcontrib><creatorcontrib>Lieberman, Marya</creatorcontrib><title>Loss of Siloxane Monolayers from GaN Surfaces in Water</title><title>Langmuir</title><addtitle>Langmuir</addtitle><description>Gallium nitride, with a thin passivating layer of Ga2O3, has been functionalized with octadecyltrichlorosilane (OTS) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAMs). Water contact angles, atomic force microscopy, and X-ray photoelectron spectroscopy were used for characterization of the bare and functionalized surfaces. The SAMs are stable in acetonitrile, but both the hydrophobic OTS SAM and the hydrophilic APTES SAM completely desorb after 1–24 h of immersion in water and common buffers. The concentration of gallium in solution after a clean GaN chip is immersed in water is consistent with dissolution of roughly one monolayer of interfacial gallium oxide. Dissolution of this oxide layer could account for the loss of SAMs from GaN surfaces.</description><subject>Chemistry</subject><subject>Exact sciences and technology</subject><subject>Gallium - chemistry</subject><subject>General and physical chemistry</subject><subject>Hydrophobic and Hydrophilic Interactions</subject><subject>Propylamines</subject><subject>Silanes - chemistry</subject><subject>Siloxanes - chemistry</subject><subject>Solid-liquid interface</subject><subject>Solubility</subject><subject>Surface physical chemistry</subject><subject>Surface Properties</subject><subject>Water - chemistry</subject><issn>0743-7463</issn><issn>1520-5827</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNpt0LtKA0EUBuBBFBOjhS8g0wharM79UkrQKEQtolgus3OBDbs7cSYL5u1dSTSN1Wk-_nPOD8A5RjcYEXzbGIaQYnp5AMaYE1RwReQhGCPJaCGZoCNwkvMSIaQp08dgRCinTDE1BmIec4YxwEXdxC_Tefgcu9iYjU8ZhhRbODMvcNGnYKzPsO7gh1n7dAqOgmmyP9vNCXh_uH-bPhbz19nT9G5eGMr4uvDauaCR4Ipy7bzChDtrg3LOaIZ9ZZGolEPas4pUTjFMxfAJFsgYYakUdAKutrmrFD97n9dlW2frm2a4NPa5xJRJqTQjaKDXW2rT8FLyoVylujVpU2JU_tRU_tU02ItdbF-13v3J314GcLkDJlvThGQ6W-e9k5RgzuXeGZvLZexTN7Txz8JvfbJ5bA</recordid><startdate>20130430</startdate><enddate>20130430</enddate><creator>Arisio, Christina</creator><creator>Cassou, Catherine A</creator><creator>Lieberman, Marya</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope></search><sort><creationdate>20130430</creationdate><title>Loss of Siloxane Monolayers from GaN Surfaces in Water</title><author>Arisio, Christina ; Cassou, Catherine A ; Lieberman, Marya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a345t-e9ddf90658359de8125dccf8dda941ebc06b8d09e4b2bd84136400160aa6c3763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Chemistry</topic><topic>Exact sciences and technology</topic><topic>Gallium - chemistry</topic><topic>General and physical chemistry</topic><topic>Hydrophobic and Hydrophilic Interactions</topic><topic>Propylamines</topic><topic>Silanes - chemistry</topic><topic>Siloxanes - chemistry</topic><topic>Solid-liquid interface</topic><topic>Solubility</topic><topic>Surface physical chemistry</topic><topic>Surface Properties</topic><topic>Water - chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Arisio, Christina</creatorcontrib><creatorcontrib>Cassou, Catherine A</creatorcontrib><creatorcontrib>Lieberman, Marya</creatorcontrib><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Langmuir</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Arisio, Christina</au><au>Cassou, Catherine A</au><au>Lieberman, Marya</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Loss of Siloxane Monolayers from GaN Surfaces in Water</atitle><jtitle>Langmuir</jtitle><addtitle>Langmuir</addtitle><date>2013-04-30</date><risdate>2013</risdate><volume>29</volume><issue>17</issue><spage>5145</spage><epage>5149</epage><pages>5145-5149</pages><issn>0743-7463</issn><eissn>1520-5827</eissn><coden>LANGD5</coden><abstract>Gallium nitride, with a thin passivating layer of Ga2O3, has been functionalized with octadecyltrichlorosilane (OTS) and aminopropyltriethoxysilane (APTES) self-assembled monolayers (SAMs). 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| subjects | Chemistry Exact sciences and technology Gallium - chemistry General and physical chemistry Hydrophobic and Hydrophilic Interactions Propylamines Silanes - chemistry Siloxanes - chemistry Solid-liquid interface Solubility Surface physical chemistry Surface Properties Water - chemistry |
| title | Loss of Siloxane Monolayers from GaN Surfaces in Water |
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