Ultrathin Body Poly(3-hexylthiophene) Transistors with Improved Short-Channel Performance

Ultrathin Body Poly(3-hexylthiophene) Transistors with Improved Short-Channel Performance

The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the...

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Veröffentlicht in:ACS applied materials & interfaces 2013-04, Vol.5 (7), p.2342-2346
Hauptverfasser: Wang, Chenchen, Rivnay, Jonathan, Himmelberger, Scott, Vakhshouri, Kiarash, Toney, Michael F, Gomez, Enrique D, Salleo, Alberto
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container_end_page 2346
container_issue 7
container_start_page 2342
container_title ACS applied materials & interfaces
container_volume 5
creator Wang, Chenchen
Rivnay, Jonathan
Himmelberger, Scott
Vakhshouri, Kiarash
Toney, Michael F
Gomez, Enrique D
Salleo, Alberto
description The microstructure and charge transport properties of binary blends of regioregular (rr) and regiorandom (RRa) poly(3-hexylthiophene) (P3HT) are investigated. X-ray diffraction of the blended films is consistent with a vertically separated structure, with rr-P3HT preferentially crystallizing at the semiconductor/dielectric interface. Thin film transistors made with these blended films preserve high field effect mobility with rr-P3HTcontent as low as 5.6%. In these dilute blends, we estimate that the thickness of rr-P3HT in the channel is only a few nanometers. Significantly, as a result of such an ultrathin active layer at the interface, short channel effects due to bulk currents are eliminated, suggesting a new route to fabricate high-performance, short-channel, and reliable organic electronic devices.
doi_str_mv 10.1021/am3027103
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title Ultrathin Body Poly(3-hexylthiophene) Transistors with Improved Short-Channel Performance
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