Effects of spatial confinement and layer disorder in photoluminescence of GaAs sub(1-x)Bi sub(x)/GaAs heterostructures

The structural and optical properties of a set of high-quality GaAs sub(1-x)Bi sub(x)/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spat...

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Veröffentlicht in:	Journal of physics. D, Applied physics Applied physics, 2013-02, Vol.46 (6), p.065306-1-8
Hauptverfasser:	Mazur, YI, Dorogan, V G, Benamara, M, Ware, ME, Schmidbauer, M, Tarasov, G G, Johnson, SR, Lu, X, Yu, S-Q, Tiedje, T, Salamo, G J
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Sprache:	eng
Schlagworte:	Confinement Disorders Gallium arsenide Gallium arsenides Heterostructures Line shape Optical properties Photoluminescence
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creator	Mazur, YI Dorogan, V G Benamara, M Ware, ME Schmidbauer, M Tarasov, G G Johnson, SR Lu, X Yu, S-Q Tiedje, T Salamo, G J
description	The structural and optical properties of a set of high-quality GaAs sub(1-x)Bi sub(x)/GaAs quantum well (QW) heterostructures with Bi concentrations ranging from 3.5% to 6.7% are studied. The energies of the excitonic ground state transitions are determined as a function of Bi concentration and spatial confinement. The influence of material disorder on the optical properties of QWs is investigated. It is determined that trap-related luminescence responds differently to temperature changes depending on whether the Bi concentration is more or less than 5%. Below 5% it contributes significantly to the overall photoluminescence line shape whereas above 5%, it is insignificant.
doi_str_mv	10.1088/0022-3727/46/6/065306
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subjects	Confinement Disorders Gallium arsenide Gallium arsenides Heterostructures Line shape Optical properties Photoluminescence
title	Effects of spatial confinement and layer disorder in photoluminescence of GaAs sub(1-x)Bi sub(x)/GaAs heterostructures
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