Enhanced dielectric properties of Pb0.92La0.08 Zr0.52Ti0.48O3 films with compressive stress

We deposited ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 (PLZT 8/52/48) films on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. Prior to the deposition of PLZT, a conductive oxide buffer layer of LaNiO3 (LNO) was deposited on the nickel foil. Residual stresses of the films were determined by x-ray diffraction. Compressive stress of ≈−370 MPa and tensile stress of ≈250 MPa were measured in ≈2-μm-thick PLZT grown on LNO-buffered Ni foil and PtSi substrate, respectively. We also measured the following electrical properties for the PLZT films grown on LNO-buffered Ni and PtSi substrates, respectively: remanent polarization, ≈23.5 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO-buffered Ni and PtSi substrates, respectively. The difference in dielectric properties and breakdown strength can be attributed to the residual stress in the PLZT films. Our results suggest that compressive stress enhances the dielectric breakdown strength of the PLZT films.