P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory
Vinylidene fluoride-trifluoroethylene-chlorofluoroethylene terpolymer, P(VDF-TrFE-CFE), with small amount of CFE is utilized for thin-film nonvolatile memory. Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writin...
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| Veröffentlicht in: | Applied physics letters 2013-02, Vol.102 (6) |
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| container_title | Applied physics letters |
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| creator | Chen, Xin Liu, Lu Liu, Shi-Zheng Cui, Yu-Shuang Chen, Xiang-Zhong Ge, Hai-Xiong Shen, Qun-Dong |
| description | Vinylidene fluoride-trifluoroethylene-chlorofluoroethylene terpolymer, P(VDF-TrFE-CFE), with small amount of CFE is utilized for thin-film nonvolatile memory. Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writing-erasing procedure is completely reversible. High signal-to-noise and high capability for data storage are observed in this memory system. Polarization state of the terpolymer is rather stable, making it applicable for memory devices. Polarization switching behavior in the terpolymer can be ascribed to reduced polar domain size with respect to the P(VDF-TrFE) copolymer, and energy cost of domain wall motion during electrically polarization switching decreases. |
| doi_str_mv | 10.1063/1.4791598 |
| format | Article |
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Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writing-erasing procedure is completely reversible. High signal-to-noise and high capability for data storage are observed in this memory system. Polarization state of the terpolymer is rather stable, making it applicable for memory devices. Polarization switching behavior in the terpolymer can be ascribed to reduced polar domain size with respect to the P(VDF-TrFE) copolymer, and energy cost of domain wall motion during electrically polarization switching decreases.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4791598</identifier><language>eng</language><subject>Copolymers ; Data storage ; Electronics ; Memory devices ; Polarization ; Switching ; Terpolymers ; Thin films ; Voltage</subject><ispartof>Applied physics letters, 2013-02, Vol.102 (6)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c262t-804dfeeafc8c041c68ef7e06bc53a51feaf0143d90195de0b0c38cd8c43af7853</citedby><cites>FETCH-LOGICAL-c262t-804dfeeafc8c041c68ef7e06bc53a51feaf0143d90195de0b0c38cd8c43af7853</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Chen, Xin</creatorcontrib><creatorcontrib>Liu, Lu</creatorcontrib><creatorcontrib>Liu, Shi-Zheng</creatorcontrib><creatorcontrib>Cui, Yu-Shuang</creatorcontrib><creatorcontrib>Chen, Xiang-Zhong</creatorcontrib><creatorcontrib>Ge, Hai-Xiong</creatorcontrib><creatorcontrib>Shen, Qun-Dong</creatorcontrib><title>P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory</title><title>Applied physics letters</title><description>Vinylidene fluoride-trifluoroethylene-chlorofluoroethylene terpolymer, P(VDF-TrFE-CFE), with small amount of CFE is utilized for thin-film nonvolatile memory. Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writing-erasing procedure is completely reversible. High signal-to-noise and high capability for data storage are observed in this memory system. Polarization state of the terpolymer is rather stable, making it applicable for memory devices. Polarization switching behavior in the terpolymer can be ascribed to reduced polar domain size with respect to the P(VDF-TrFE) copolymer, and energy cost of domain wall motion during electrically polarization switching decreases.</description><subject>Copolymers</subject><subject>Data storage</subject><subject>Electronics</subject><subject>Memory devices</subject><subject>Polarization</subject><subject>Switching</subject><subject>Terpolymers</subject><subject>Thin films</subject><subject>Voltage</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotUD1PwzAUtBBIlMLAP_DYDi7vxflwRlQaQIoEQ2GNXOeZBiVxsFOk_nuCWt1wd7rTDcfYPcIKIZUPuIqzHJNcXbAZQpYJiagu2QwApEjzBK_ZTQjfk00iKWesfF98PhVi64uNWBebJR_JD649duT5uG96YZu249Z5vm--9nwgP-lO94Z47_pf1-qxaYl31Dl_vGVXVreB7s48Zx_FZrt-EeXb8-v6sRQmSqNRKIhrS6StUQZiNKkimxGkO5NInaCdEsBY1jlgntQEOzBSmVqZWGqbqUTO2eK0O3j3c6AwVl0TDLWt7skdQoUymiAhjabq8lQ13oXgyVaDbzrtjxVC9f9YhdX5MfkHUvFc_g</recordid><startdate>20130211</startdate><enddate>20130211</enddate><creator>Chen, Xin</creator><creator>Liu, Lu</creator><creator>Liu, Shi-Zheng</creator><creator>Cui, Yu-Shuang</creator><creator>Chen, Xiang-Zhong</creator><creator>Ge, Hai-Xiong</creator><creator>Shen, Qun-Dong</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20130211</creationdate><title>P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory</title><author>Chen, Xin ; Liu, Lu ; Liu, Shi-Zheng ; Cui, Yu-Shuang ; Chen, Xiang-Zhong ; Ge, Hai-Xiong ; Shen, Qun-Dong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c262t-804dfeeafc8c041c68ef7e06bc53a51feaf0143d90195de0b0c38cd8c43af7853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Copolymers</topic><topic>Data storage</topic><topic>Electronics</topic><topic>Memory devices</topic><topic>Polarization</topic><topic>Switching</topic><topic>Terpolymers</topic><topic>Thin films</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Xin</creatorcontrib><creatorcontrib>Liu, Lu</creatorcontrib><creatorcontrib>Liu, Shi-Zheng</creatorcontrib><creatorcontrib>Cui, Yu-Shuang</creatorcontrib><creatorcontrib>Chen, Xiang-Zhong</creatorcontrib><creatorcontrib>Ge, Hai-Xiong</creatorcontrib><creatorcontrib>Shen, Qun-Dong</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Xin</au><au>Liu, Lu</au><au>Liu, Shi-Zheng</au><au>Cui, Yu-Shuang</au><au>Chen, Xiang-Zhong</au><au>Ge, Hai-Xiong</au><au>Shen, Qun-Dong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory</atitle><jtitle>Applied physics letters</jtitle><date>2013-02-11</date><risdate>2013</risdate><volume>102</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Vinylidene fluoride-trifluoroethylene-chlorofluoroethylene terpolymer, P(VDF-TrFE-CFE), with small amount of CFE is utilized for thin-film nonvolatile memory. Polarization switching voltage for a 50 nm-thick film can be as low as 1 V, and is well suited for integrated driving electronics. The writing-erasing procedure is completely reversible. High signal-to-noise and high capability for data storage are observed in this memory system. Polarization state of the terpolymer is rather stable, making it applicable for memory devices. Polarization switching behavior in the terpolymer can be ascribed to reduced polar domain size with respect to the P(VDF-TrFE) copolymer, and energy cost of domain wall motion during electrically polarization switching decreases.</abstract><doi>10.1063/1.4791598</doi></addata></record> |
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| ispartof | Applied physics letters, 2013-02, Vol.102 (6) |
| issn | 0003-6951 1077-3118 |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Copolymers Data storage Electronics Memory devices Polarization Switching Terpolymers Thin films Voltage |
| title | P(VDF-TrFE-CFE) terpolymer thin-film for high performance nonvolatile memory |
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