Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots
In this letter, we report about mode characteristics of microcavity lasers with red-emitting InP quantum dots. The mode spectra and the quality factor of devices with different oxide aperture sizes are analyzed. The lateral mode confinement in the electrical devices is defined via oxide apertures. W...
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| Veröffentlicht in: | Applied physics letters 2013-01, Vol.102 (1) |
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| container_title | Applied physics letters |
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| creator | Weidenfeld, S. Schulz, W.-M. Kessler, C. A. Reischle, M. Eichfelder, M. Wiesner, M. Jetter, M. Michler, P. |
| description | In this letter, we report about mode characteristics of microcavity lasers with red-emitting InP quantum dots. The mode spectra and the quality factor of devices with different oxide aperture sizes are analyzed. The lateral mode confinement in the electrical devices is defined via oxide apertures. We found a good agreement between a simple analytical modeling of the mode structure and measurements, which allows to adjust the design of future devices. The quality factors show an analogous behavior as etched micropillars. The enhanced intensity of the higher order modes compared to the fundamental mode can be explained with the current density distribution within the device favoring higher order modes. |
| doi_str_mv | 10.1063/1.4774384 |
| format | Article |
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The enhanced intensity of the higher order modes compared to the fundamental mode can be explained with the current density distribution within the device favoring higher order modes.</description><subject>Apertures</subject><subject>Devices</subject><subject>Indium phosphides</subject><subject>Microcavities</subject><subject>Oxides</subject><subject>Quality factor</subject><subject>Quantum dots</subject><subject>Spectra</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotUMtOAjEUbYwmIrrwD7qExME-ZtqyJESRhEQX7Cedzp1QMw9oOwif4F_bEXIX596cR3IPQs-UzCgR_JXOUilTrtIbNKJEyoRTqm7RiBDCEzHP6D168P47nhnjfIR-121V99AawF2Fwy7CyZaA9R5c6B1gp0vbe9y1_2TTRc7vwQSnB8NkUb-s9HTh8THqrdE1bqxxndFHGyx4_GPDDkM9GAa2PmM4GRugxOv2Cx963Ya-wWUX_CO6q3Tt4emKY7R9f9suP5LN52q9XGwSwwQLSVYKVgrOqEoJg7iIqsgKplLIpBGGymKeaSIKYJksqZFSkEox0IVUSumSj9HkErt33aEHH_LGegN1rVvoep9TzuKQWGGUTi_S-JD3Dqp872yj3TmnJB_azml-bZv_AYNHcns</recordid><startdate>20130107</startdate><enddate>20130107</enddate><creator>Weidenfeld, S.</creator><creator>Schulz, W.-M.</creator><creator>Kessler, C. 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| ispartof | Applied physics letters, 2013-01, Vol.102 (1) |
| issn | 0003-6951 1077-3118 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Apertures Devices Indium phosphides Microcavities Oxides Quality factor Quantum dots Spectra |
| title | Influence of the oxide aperture radius on the mode spectra of (Al,Ga)As vertical microcavities with electrically excited InP quantum dots |
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