Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

The atomic scale structural and electronic characteristics of a silicon sample implanted with bismuth atoms are investigated using cross-sectional scanning tunneling microscopy (XSTM) and scanning tunneling spectroscopy (STS). We demonstrate that cleaving ion implanted samples provides an effective...

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Veröffentlicht in:Applied physics letters 2013-01, Vol.102 (1)
Hauptverfasser: Studer, Philipp, Schofield, Steven R., Hirjibehedin, Cyrus F., Curson, Neil J.
Format: Artikel
Sprache:eng
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Atomic beam spectroscopy
Atomic force microscopy
Atomic structure
Cross sections (physics)
Density
Impurities
Scanning tunneling microscopy
Silicon
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container_title Applied physics letters
container_volume 102
creator Studer, Philipp
Schofield, Steven R.
Hirjibehedin, Cyrus F.
Curson, Neil J.
description The atomic scale structural and electronic characteristics of a silicon sample implanted with bismuth atoms are investigated using cross-sectional scanning tunneling microscopy (XSTM) and scanning tunneling spectroscopy (STS). We demonstrate that cleaving ion implanted samples provides an effective room temperature route for the preparation of atomically flat silicon surfaces with low defect density, preventing the diffusion of volatile impurities such as dopants. This enables atomic resolution STM studies of solitary implanted impurity atoms in their intrinsic silicon crystal sites and further allows us to map out a depth profile of the band-structure of the implanted area using STS.
doi_str_mv 10.1063/1.4772508
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects Atomic beam spectroscopy
Atomic force microscopy
Atomic structure
Cross sections (physics)
Density
Impurities
Scanning tunneling microscopy
Silicon
title Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy
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