A low drift curvature-compensated bandgap reference with trimming resistive circuit

A low temperature drift curvature-compensated complementary metal oxide semiconductor （CMOS） bandgap ref- erence is proposed. A dual-differential-pair amplifier was employed to add compensation with a high-order term of TInT （T is the thermodynamic temperature） to the traditional 1 st-order compensa...

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Veröffentlicht in:	Frontiers of information technology & electronic engineering 2011-08, Vol.12 (8), p.698-706
Hauptverfasser:	Ning, Zhi-hua, He, Le-nian
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Circuits CMOS Communications Engineering Computer Hardware Computer Science Computer Systems Organization and Communication Networks Curvature Drift Electric potential Electric power supplies Electrical Engineering Electronics and Microelectronics Energy gap Field effect transistors Instrumentation Low temperature Metal oxides MOSFETs Networks Noise levels Semiconductor devices Semiconductors Trimming Voltage
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