Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers

We extend the pseudo-metal-oxide-semiconductor field-effect transistor ( psi -MOSFET) technique to the low-temperature range in order to investigate the transport properties of as-fabricated silicon-on-insulator (SOI) wafers. This paper shows experimental results on the temperature dependence of drain current and extracted parameters (hole and electron mobility, subthreshold slope, and threshold voltage). In ultrathin SOI films, the coupling between channel and free surface is strong, degrading the subthreshold swing and threshold voltage. The impact of interface trap density is significant at low temperature. The good correlation between experimental and theoretical curves proves the feasibility of psi -MOSFET measurements on bare silicon-on-insulator wafers at low-temperature.