Misfit management for reduced dislocation formation in epitaxial quantum-dot-based devices

The improved control of lattice strain in the quantum-dot (QD) region of p–i–n structures using a modified epitaxial growth procedure has been observed and analyzed. Strain in the QD region was managed by (a) inserting a correction layer (CL) with a lattice constant that was intermediate between the...

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Veröffentlicht in:	Journal of crystal growth 2013-02, Vol.364, p.169-177
Hauptverfasser:	Gandhi, Jateen S., Kim, Choong-Un, Kirk, Wiley P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Defects and dislocations A1. Interfaces and misfit strain A1. Low dimensional structures and quantum-dots A1. X-ray diffraction A3. Molecular beam epitaxy B2. Semiconducting III–V materials Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Density Devices Dislocations Exact sciences and technology Indium arsenides Lattice parameters Linear defects: dislocations, disclinations Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Physics Quantum dots Strain Structure of solids and liquids crystallography
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