Temperature dependence of 1/ f noise in Ni/n-GaN Schottky barrier diode
1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current flu...
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| Veröffentlicht in: | Journal of applied physics 2012-07, Vol.112 (2) |
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| container_title | Journal of applied physics |
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| creator | Kumar, Ashutosh Asokan, K. Kumar, V. Singh, R. |
| description | 1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage (I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80–300 K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model. |
| doi_str_mv | 10.1063/1.4737258 |
| format | Article |
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The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage (I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80–300 K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.4737258</identifier><language>eng</language><subject>Barriers ; Density ; Diodes ; Fluctuation ; Inhomogeneities ; Nickel ; Noise ; Spectra</subject><ispartof>Journal of applied physics, 2012-07, Vol.112 (2)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-414c72ce5400cbfbb23f2cf86879dda03df94a9e734bd615e2a65a44d05765de3</citedby><cites>FETCH-LOGICAL-c328t-414c72ce5400cbfbb23f2cf86879dda03df94a9e734bd615e2a65a44d05765de3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27915,27916</link.rule.ids></links><search><creatorcontrib>Kumar, Ashutosh</creatorcontrib><creatorcontrib>Asokan, K.</creatorcontrib><creatorcontrib>Kumar, V.</creatorcontrib><creatorcontrib>Singh, R.</creatorcontrib><title>Temperature dependence of 1/ f noise in Ni/n-GaN Schottky barrier diode</title><title>Journal of applied physics</title><description>1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage (I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80–300 K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model.</description><subject>Barriers</subject><subject>Density</subject><subject>Diodes</subject><subject>Fluctuation</subject><subject>Inhomogeneities</subject><subject>Nickel</subject><subject>Noise</subject><subject>Spectra</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkD9PAjEchhujiYgOfoOOOhz077UdDVE0ITiIc9Nrf41VuJ7tMfDtxcC7vMuTZ3gQuqdkRknL53QmFFdM6gs0oUSbRklJLtGEEEYbbZS5Rje1fhNCqeZmgpYb2A1Q3LgvgAMM0AfoPeAcMZ3jiPucKuDU43Wa983SrfGH_8rj-HPAnSslQcEh5QC36Cq6bYW780_R58vzZvHarN6Xb4unVeM502MjqPCKeZCCEN_FrmM8Mh91q5UJwREeohHOgOKiCy2VwFwrnRCBSNXKAHyKHk7eoeTfPdTR7lL1sN26HvK-WsoZZ8dJfkQfT6gvudYC0Q4l7Vw5WErsfyxL7TkW_wPcblox</recordid><startdate>20120715</startdate><enddate>20120715</enddate><creator>Kumar, Ashutosh</creator><creator>Asokan, K.</creator><creator>Kumar, V.</creator><creator>Singh, R.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120715</creationdate><title>Temperature dependence of 1/ f noise in Ni/n-GaN Schottky barrier diode</title><author>Kumar, Ashutosh ; Asokan, K. ; Kumar, V. ; Singh, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-414c72ce5400cbfbb23f2cf86879dda03df94a9e734bd615e2a65a44d05765de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Barriers</topic><topic>Density</topic><topic>Diodes</topic><topic>Fluctuation</topic><topic>Inhomogeneities</topic><topic>Nickel</topic><topic>Noise</topic><topic>Spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kumar, Ashutosh</creatorcontrib><creatorcontrib>Asokan, K.</creatorcontrib><creatorcontrib>Kumar, V.</creatorcontrib><creatorcontrib>Singh, R.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kumar, Ashutosh</au><au>Asokan, K.</au><au>Kumar, V.</au><au>Singh, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature dependence of 1/ f noise in Ni/n-GaN Schottky barrier diode</atitle><jtitle>Journal of applied physics</jtitle><date>2012-07-15</date><risdate>2012</risdate><volume>112</volume><issue>2</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f′ with γ varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage (I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80–300 K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model.</abstract><doi>10.1063/1.4737258</doi></addata></record> |
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| ispartof | Journal of applied physics, 2012-07, Vol.112 (2) |
| issn | 0021-8979 1089-7550 |
| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Barriers Density Diodes Fluctuation Inhomogeneities Nickel Noise Spectra |
| title | Temperature dependence of 1/ f noise in Ni/n-GaN Schottky barrier diode |
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