Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes
The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitori...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 2012-09, Vol.101 (12) |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 12 |
| container_start_page | |
| container_title | Applied physics letters |
| container_volume | 101 |
| creator | De, Suman Layek, Arunasish Bhattacharya, Sukanya Kumar Das, Dibyendu Kadir, Abdul Bhattacharya, Arnab Dhar, Subhabrata Chowdhury, Arindam |
| description | The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In,Ga)N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400 meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field. |
| doi_str_mv | 10.1063/1.4754079 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1323217128</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1323217128</sourcerecordid><originalsourceid>FETCH-LOGICAL-c328t-ef64047cc95dc399cb5448ecec8c087bafb0bf638fb777645f6790c0fc9f31613</originalsourceid><addsrcrecordid>eNotkE9PwzAMxSMEEmNw4BvkCIduSdM2zRFNMCZNICQ4V6nrbIE03ZpU_Pn0dNoOtvXkn5_kR8gtZzPOCjHns0zmGZPqjEw4kzIRnJfnZMIYE0mhcn5JrkL4HGWeCjEhP2-D9nFoE-i8sR4bGqLuvygagxCp9dR1oJ39GzduaEciAPpIDw37QL9t3I7Qyi_1y3wsuj_5faNztNbhcGc320ixtTFav6GN7RoM1-TCaBfw5jSn5OPp8X3xnKxfl6vFwzoBkZYxQVNkLJMAKm9AKAV1nmUlAkIJrJS1NjWrTSFKU0spiyw3hVQMmAFlBC-4mJK7o--u7_YDhli1dnzBOe2xG0LFRSpSLnlajuj9EYW-C6FHU-162-r-t-KsOqRb8eqUrvgH82ZuQw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1323217128</pqid></control><display><type>article</type><title>Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>De, Suman ; Layek, Arunasish ; Bhattacharya, Sukanya ; Kumar Das, Dibyendu ; Kadir, Abdul ; Bhattacharya, Arnab ; Dhar, Subhabrata ; Chowdhury, Arindam</creator><creatorcontrib>De, Suman ; Layek, Arunasish ; Bhattacharya, Sukanya ; Kumar Das, Dibyendu ; Kadir, Abdul ; Bhattacharya, Arnab ; Dhar, Subhabrata ; Chowdhury, Arindam</creatorcontrib><description>The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In,Ga)N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400 meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.4754079</identifier><language>eng</language><subject>Indium ; Light-emitting diodes ; Nanomaterials ; Nanostructure ; Polarization ; Quantum wells ; Semiconductors ; Stark effect</subject><ispartof>Applied physics letters, 2012-09, Vol.101 (12)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-ef64047cc95dc399cb5448ecec8c087bafb0bf638fb777645f6790c0fc9f31613</citedby><cites>FETCH-LOGICAL-c328t-ef64047cc95dc399cb5448ecec8c087bafb0bf638fb777645f6790c0fc9f31613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>De, Suman</creatorcontrib><creatorcontrib>Layek, Arunasish</creatorcontrib><creatorcontrib>Bhattacharya, Sukanya</creatorcontrib><creatorcontrib>Kumar Das, Dibyendu</creatorcontrib><creatorcontrib>Kadir, Abdul</creatorcontrib><creatorcontrib>Bhattacharya, Arnab</creatorcontrib><creatorcontrib>Dhar, Subhabrata</creatorcontrib><creatorcontrib>Chowdhury, Arindam</creatorcontrib><title>Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes</title><title>Applied physics letters</title><description>The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In,Ga)N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400 meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field.</description><subject>Indium</subject><subject>Light-emitting diodes</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Polarization</subject><subject>Quantum wells</subject><subject>Semiconductors</subject><subject>Stark effect</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkE9PwzAMxSMEEmNw4BvkCIduSdM2zRFNMCZNICQ4V6nrbIE03ZpU_Pn0dNoOtvXkn5_kR8gtZzPOCjHns0zmGZPqjEw4kzIRnJfnZMIYE0mhcn5JrkL4HGWeCjEhP2-D9nFoE-i8sR4bGqLuvygagxCp9dR1oJ39GzduaEciAPpIDw37QL9t3I7Qyi_1y3wsuj_5faNztNbhcGc320ixtTFav6GN7RoM1-TCaBfw5jSn5OPp8X3xnKxfl6vFwzoBkZYxQVNkLJMAKm9AKAV1nmUlAkIJrJS1NjWrTSFKU0spiyw3hVQMmAFlBC-4mJK7o--u7_YDhli1dnzBOe2xG0LFRSpSLnlajuj9EYW-C6FHU-162-r-t-KsOqRb8eqUrvgH82ZuQw</recordid><startdate>20120917</startdate><enddate>20120917</enddate><creator>De, Suman</creator><creator>Layek, Arunasish</creator><creator>Bhattacharya, Sukanya</creator><creator>Kumar Das, Dibyendu</creator><creator>Kadir, Abdul</creator><creator>Bhattacharya, Arnab</creator><creator>Dhar, Subhabrata</creator><creator>Chowdhury, Arindam</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20120917</creationdate><title>Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes</title><author>De, Suman ; Layek, Arunasish ; Bhattacharya, Sukanya ; Kumar Das, Dibyendu ; Kadir, Abdul ; Bhattacharya, Arnab ; Dhar, Subhabrata ; Chowdhury, Arindam</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-ef64047cc95dc399cb5448ecec8c087bafb0bf638fb777645f6790c0fc9f31613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Indium</topic><topic>Light-emitting diodes</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Polarization</topic><topic>Quantum wells</topic><topic>Semiconductors</topic><topic>Stark effect</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>De, Suman</creatorcontrib><creatorcontrib>Layek, Arunasish</creatorcontrib><creatorcontrib>Bhattacharya, Sukanya</creatorcontrib><creatorcontrib>Kumar Das, Dibyendu</creatorcontrib><creatorcontrib>Kadir, Abdul</creatorcontrib><creatorcontrib>Bhattacharya, Arnab</creatorcontrib><creatorcontrib>Dhar, Subhabrata</creatorcontrib><creatorcontrib>Chowdhury, Arindam</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>De, Suman</au><au>Layek, Arunasish</au><au>Bhattacharya, Sukanya</au><au>Kumar Das, Dibyendu</au><au>Kadir, Abdul</au><au>Bhattacharya, Arnab</au><au>Dhar, Subhabrata</au><au>Chowdhury, Arindam</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes</atitle><jtitle>Applied physics letters</jtitle><date>2012-09-17</date><risdate>2012</risdate><volume>101</volume><issue>12</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The nature of the polarization-field in disorder induced nanoscale potential fluctuations (radiative traps) within (In,Ga)N based quantum-well (QW) heterostructures remains ambiguous. Spectrally resolved photoluminescence microscopy has been utilized to probe the local polarization field by monitoring the extent of quantum-confined Stark effect (QCSE) in radiative trap centers spontaneously formed within an (In,Ga)N QW based light emitting diode. Interestingly, two distinct categories of nanoscale radiative domains, which arise from indium compositional and interface-morphology related fluctuations of the active layers, are found to have very different degree of built-in polarization fields. Screening of QCSE in indium-rich emission centers results in blue-shift of transition energies by up to 400 meV, significantly higher than that reported previously for group III-nitride based semiconductor heterostructures. A lack of correlation between the extent of QCSE and local indium mole-fractions suggests that size, shape, and strain of individual localization centers play a crucial role in modulating the local polarization field.</abstract><doi>10.1063/1.4754079</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-09, Vol.101 (12) |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1323217128 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Indium Light-emitting diodes Nanomaterials Nanostructure Polarization Quantum wells Semiconductors Stark effect |
| title | Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T11%3A21%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Quantum-confined%20stark%20effect%20in%20localized%20luminescent%20centers%20within%20InGaN/GaN%20quantum-well%20based%20light%20emitting%20diodes&rft.jtitle=Applied%20physics%20letters&rft.au=De,%20Suman&rft.date=2012-09-17&rft.volume=101&rft.issue=12&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.4754079&rft_dat=%3Cproquest_cross%3E1323217128%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1323217128&rft_id=info:pmid/&rfr_iscdi=true |