Thickness dependence of temperature-induced emission mechanism in InGaN/AlGaN short-period superlattices

An analysis of temperature-dependent photoluminescence (PL) spectra for a series of InGaN/AlGaN short-period superlattices (SP-SLs) with different well and barrier thickness is presented. A quantitative model, based on Gaussian-like function of localized electronic states, to fit the temperature-dep...

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Veröffentlicht in:	Journal of applied physics 2012-08, Vol.112 (4)
Hauptverfasser:	Noh, Young-Kyun, Seo, Jeong-Han, Choi, Hyo-Seok, Kim, Moon-Deock, Oh, Jae-Eung
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Emission Fluctuation Indium gallium nitrides Mathematical models Position (location) Quenching Superlattices
Online-Zugang:	Volltext
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