High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures

We investigate the transport properties of thin-film transistors using indium oxide (In 2 O 3 )/gallium oxide (Ga 2 O 3 ) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to μ FE =51.3 cm 2 /Vs and ON/OFF c...

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Veröffentlicht in:	Applied physics letters 2012-02, Vol.100 (6), p.063506-063506-4
Hauptverfasser:	Wang, S.-L., Yu, J.-W., Yeh, P.-C., Kuo, H.-W., Peng, L.-H., Fedyanin, A. A., Mishina, E. D., Sigov, A. S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Combinatorial analysis Devices Gallium oxides Indium oxides Modulation Semiconductor devices Thin films Transistors
Online-Zugang:	Volltext
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