High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures
We investigate the transport properties of thin-film transistors using indium oxide (In 2 O 3 )/gallium oxide (Ga 2 O 3 ) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to μ FE =51.3 cm 2 /Vs and ON/OFF c...
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| Veröffentlicht in: | Applied physics letters 2012-02, Vol.100 (6), p.063506-063506-4 |
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| container_end_page | 063506-4 |
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| container_issue | 6 |
| container_start_page | 063506 |
| container_title | Applied physics letters |
| container_volume | 100 |
| creator | Wang, S.-L. Yu, J.-W. Yeh, P.-C. Kuo, H.-W. Peng, L.-H. Fedyanin, A. A. Mishina, E. D. Sigov, A. S. |
| description | We investigate the transport properties of thin-film transistors using indium oxide (In
2
O
3
)/gallium oxide (Ga
2
O
3
) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to
μ
FE
=51.3 cm
2
/Vs and ON/OFF current ratio to 10
8
due to combinatorial layer thickness modulation. With the Ga
2
O
3
layer thickness ratio increase to R=14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing. |
| doi_str_mv | 10.1063/1.3683518 |
| format | Article |
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2
O
3
)/gallium oxide (Ga
2
O
3
) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to
μ
FE
=51.3 cm
2
/Vs and ON/OFF current ratio to 10
8
due to combinatorial layer thickness modulation. With the Ga
2
O
3
layer thickness ratio increase to R=14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3683518</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><subject>Channels ; Combinatorial analysis ; Devices ; Gallium oxides ; Indium oxides ; Modulation ; Semiconductor devices ; Thin films ; Transistors</subject><ispartof>Applied physics letters, 2012-02, Vol.100 (6), p.063506-063506-4</ispartof><rights>2012 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c317t-44742efb9c28bf429038ba385c6ac07df1ac8b263c0333262362e81b98dab3843</citedby><cites>FETCH-LOGICAL-c317t-44742efb9c28bf429038ba385c6ac07df1ac8b263c0333262362e81b98dab3843</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3683518$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4512,27924,27925,76384,76390</link.rule.ids></links><search><creatorcontrib>Wang, S.-L.</creatorcontrib><creatorcontrib>Yu, J.-W.</creatorcontrib><creatorcontrib>Yeh, P.-C.</creatorcontrib><creatorcontrib>Kuo, H.-W.</creatorcontrib><creatorcontrib>Peng, L.-H.</creatorcontrib><creatorcontrib>Fedyanin, A. A.</creatorcontrib><creatorcontrib>Mishina, E. D.</creatorcontrib><creatorcontrib>Sigov, A. S.</creatorcontrib><title>High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures</title><title>Applied physics letters</title><description>We investigate the transport properties of thin-film transistors using indium oxide (In
2
O
3
)/gallium oxide (Ga
2
O
3
) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to
μ
FE
=51.3 cm
2
/Vs and ON/OFF current ratio to 10
8
due to combinatorial layer thickness modulation. With the Ga
2
O
3
layer thickness ratio increase to R=14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.</description><subject>Channels</subject><subject>Combinatorial analysis</subject><subject>Devices</subject><subject>Gallium oxides</subject><subject>Indium oxides</subject><subject>Modulation</subject><subject>Semiconductor devices</subject><subject>Thin films</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp10M1KAzEUhuEgCtbqwjvIUhfT5uTMT7oRpKgVCm4UlyHJZNpIZqYmGbR3b0urO1eHD17O4iHkGtgEWIlTmGApsABxQkbAqipDAHFKRowxzMpZAefkIsaP3Sw44oi8L9xqTdteO-_Slqa162jjfEtTUF10MfUh0i-X1tR1tRta2n-72k5Xyvu_RbXLvNraQGMKg0lDsPGSnDXKR3t1vGPy9vjwOl9ky5en5_n9MjMIVcryvMq5bfTMcKGbnM8YCq1QFKZUhlV1A8oIzUs0DBF5ybHkVoCeiVppFDmOyc3h7yb0n4ONSbYuGuu96mw_RAnIkQMXhdilt4fUhD7GYBu5Ca5VYSuByT2eBHnE27V3hzYal1Ryffd_vBeUv4JyLygb_AHE2ndC</recordid><startdate>20120206</startdate><enddate>20120206</enddate><creator>Wang, S.-L.</creator><creator>Yu, J.-W.</creator><creator>Yeh, P.-C.</creator><creator>Kuo, H.-W.</creator><creator>Peng, L.-H.</creator><creator>Fedyanin, A. A.</creator><creator>Mishina, E. D.</creator><creator>Sigov, A. S.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20120206</creationdate><title>High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures</title><author>Wang, S.-L. ; Yu, J.-W. ; Yeh, P.-C. ; Kuo, H.-W. ; Peng, L.-H. ; Fedyanin, A. A. ; Mishina, E. D. ; Sigov, A. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c317t-44742efb9c28bf429038ba385c6ac07df1ac8b263c0333262362e81b98dab3843</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Channels</topic><topic>Combinatorial analysis</topic><topic>Devices</topic><topic>Gallium oxides</topic><topic>Indium oxides</topic><topic>Modulation</topic><topic>Semiconductor devices</topic><topic>Thin films</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, S.-L.</creatorcontrib><creatorcontrib>Yu, J.-W.</creatorcontrib><creatorcontrib>Yeh, P.-C.</creatorcontrib><creatorcontrib>Kuo, H.-W.</creatorcontrib><creatorcontrib>Peng, L.-H.</creatorcontrib><creatorcontrib>Fedyanin, A. A.</creatorcontrib><creatorcontrib>Mishina, E. D.</creatorcontrib><creatorcontrib>Sigov, A. S.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, S.-L.</au><au>Yu, J.-W.</au><au>Yeh, P.-C.</au><au>Kuo, H.-W.</au><au>Peng, L.-H.</au><au>Fedyanin, A. A.</au><au>Mishina, E. D.</au><au>Sigov, A. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures</atitle><jtitle>Applied physics letters</jtitle><date>2012-02-06</date><risdate>2012</risdate><volume>100</volume><issue>6</issue><spage>063506</spage><epage>063506-4</epage><pages>063506-063506-4</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We investigate the transport properties of thin-film transistors using indium oxide (In
2
O
3
)/gallium oxide (Ga
2
O
3
) bi-layer stacks as the channel material. At low gate bias, we observe the transistor field-effect mobility increases with the film resistivity to
μ
FE
=51.3 cm
2
/Vs and ON/OFF current ratio to 10
8
due to combinatorial layer thickness modulation. With the Ga
2
O
3
layer thickness ratio increase to R=14.35%, these observations are accompanied with one-order-of-magnitude reduction in the transistor subthreshold swing to 0.38 V/decade and suggest a trap-limited conduction mechanism upon which the reduced scattering centers due to annihilation of subgap states improve the device electric characteristics without post-growth annealing.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3683518</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2012-02, Vol.100 (6), p.063506-063506-4 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1323212858 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Channels Combinatorial analysis Devices Gallium oxides Indium oxides Modulation Semiconductor devices Thin films Transistors |
| title | High mobility thin film transistors with indium oxide/gallium oxide bi-layer structures |
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