Defect mechanisms in high resistivity BaTiO3–Bi(Zn1/2Ti1/2)O3 ceramics

The defect mechanisms that underpin the high energy density dielectric 0.8BaTiO3–0.2Bi(Zn1/2Ti1/2)O3 were investigated. Characterization of the nominally stoichiometric composition revealed the presence of a Ti3+-related defect center, which is correlated with lower resistivities and an electrically...

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Veröffentlicht in:	Applied physics letters 2012-09, Vol.101 (11)
Hauptverfasser:	Raengthon, Natthaphon, DeRose, Victoria J., Brennecka, Geoffrey L., Cann, David P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Ceramics Correlation Defects Dielectrics Electrical resistivity Lattice vacancies Microstructure Transport
Online-Zugang:	Volltext
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