Observation of negative contact resistances in graphene field-effect transistors

Observation of negative contact resistances in graphene field-effect transistors

The gate-voltage ( V G ) dependence of the contact resistance ( R C ) in graphene field-effect transistors is characterized by the transmission line model. The R C - V G characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point and become even negative with Ag conta...

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Veröffentlicht in:Journal of applied physics 2012-04, Vol.111 (8), p.084314-084314-7
Hauptverfasser: Nouchi, Ryo, Saito, Tatsuya, Tanigaki, Katsumi
Format: Artikel
Sprache:eng
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Contact
Contact resistance
Dipping
Graphene
Reinforced concrete
Semiconductor devices
Silver
Transistors
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container_end_page 084314-7
container_issue 8
container_start_page 084314
container_title Journal of applied physics
container_volume 111
creator Nouchi, Ryo
Saito, Tatsuya
Tanigaki, Katsumi
description The gate-voltage ( V G ) dependence of the contact resistance ( R C ) in graphene field-effect transistors is characterized by the transmission line model. The R C - V G characteristics of Ag, Cu, and Au contacts display a dip around the charge neutrality point and become even negative with Ag contacts. The dip structure is well reproduced by a model calculation that considers a metal-contact-induced potential variation near the metal contact edges. The apparently negative R C originates with the carrier doping from the metal contacts to the graphene channel and appears when the doping effect is more substantial than the actual contact resistance precisely at the contacts. The negative R C can appear at the metal contacts to Dirac-cone systems such as graphene.
doi_str_mv 10.1063/1.4705367
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source AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection
subjects Contact
Contact resistance
Dipping
Graphene
Reinforced concrete
Semiconductor devices
Silver
Transistors
title Observation of negative contact resistances in graphene field-effect transistors
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