Investigation of defect levels in Cs2Hg6S7 single crystals by photoconductivity and photoluminescence spectroscopies

The heavy element semiconductor compound Cs2Hg6S7 is of interest as a potential wide gap semiconductor for gamma ray detection. To determine electrically active defects and their energy levels, photoconductivity (PC) spectroscopy was carried out over the temperature range of 90-295 K. The low temper...

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Veröffentlicht in:	Journal of applied physics 2012-09, Vol.112 (6)
Hauptverfasser:	Peters, J. A., Cho, Nam Ki, Liu, Zhifu, Wessels, B. W., Li, Hao, Androulakis, J., Kanatzidis, M. G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Band spectra Bands Crystal defects Photoconductivity Photoluminescence Polycarbonates Semiconductors Spectroscopy
Online-Zugang:	Volltext
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