A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network
A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14GHz and 2.35GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is d...
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| Veröffentlicht in: | IEICE Transactions on Electronics 2012/11/01, Vol.E95.C(11), pp.1783-1789 |
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| container_end_page | 1789 |
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| container_issue | 11 |
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| container_title | IEICE Transactions on Electronics |
| container_volume | E95.C |
| creator | JEONG, Yongchae CHAUDHARY, Girdhari LIM, Jongsik |
| description | A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14GHz and 2.35GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA for the desired dual bands is designed. The proposed load network has the harmonic rejection of more than 24dB which is sufficient for rejecting harmonics, and an insertion loss of less than 0.11dB. The dual band matching network for the maximum output power results in the measured highest output power for each operating frequency. The fabricated class-F GaN PA has 43dBm-65.4% and 43dBm-63.9% of output power - efficiency at the desired dual frequencies. |
| doi_str_mv | 10.1587/transele.E95.C.1783 |
| format | Article |
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A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA for the desired dual bands is designed. The proposed load network has the harmonic rejection of more than 24dB which is sufficient for rejecting harmonics, and an insertion loss of less than 0.11dB. The dual band matching network for the maximum output power results in the measured highest output power for each operating frequency. The fabricated class-F GaN PA has 43dBm-65.4% and 43dBm-63.9% of output power - efficiency at the desired dual frequencies.</description><identifier>ISSN: 0916-8524</identifier><identifier>EISSN: 1745-1353</identifier><identifier>DOI: 10.1587/transele.E95.C.1783</identifier><language>eng</language><publisher>Oxford: The Institute of Electronics, Information and Communication Engineers</publisher><subject>Amplifiers ; Applied sciences ; Bands ; Circuit properties ; class-F ; dual band ; Electric, optical and optoelectronic circuits ; Electrical engineering. Electrical power engineering ; Electronic circuits ; Electronic equipment and fabrication. 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Electron.</addtitle><description>A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14GHz and 2.35GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA for the desired dual bands is designed. The proposed load network has the harmonic rejection of more than 24dB which is sufficient for rejecting harmonics, and an insertion loss of less than 0.11dB. The dual band matching network for the maximum output power results in the measured highest output power for each operating frequency. The fabricated class-F GaN PA has 43dBm-65.4% and 43dBm-63.9% of output power - efficiency at the desired dual frequencies.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bands</subject><subject>Circuit properties</subject><subject>class-F</subject><subject>dual band</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium nitrides</subject><subject>Harmonics</subject><subject>Matching</subject><subject>Networks</subject><subject>power amplifier</subject><subject>Power amplifiers</subject><subject>Power electronics, power supplies</subject><subject>Stopping</subject><issn>0916-8524</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNpdkEFvEzEQhS0EEiHwC7j4gsRlU8967V0fw5I2raK0QvRsTbyzqYOzG-wNVf89W6WNEKeZw_fem3mMfQYxA1WVF0PELlGg2cKoWT2DspJv2ATKQmUglXzLJsKAziqVF-_Zh5R2QkCVg5wwmvPvRwz8G3YNX_rtA1-0rXeeOvfE64ApZZf8Ctf8rn-kyOf7Q_CtH7f75LstR77u_1DgS4z7vvMu-0E7coPvO77qseFrGh77-Osje9diSPTpZU7Z_eXiZ73MVrdX1_V8lTlV6CHbuFYZgII2BICmAT0-IhoscldJU0hhysKIUkEutNo0kFdV0WzIlahd4Uolp-zryfcQ-99HSoPd--QoBOyoPyYLEpQ22gg5ovKEutinFKm1h-j3GJ8sCPtcqn0t1Y6l2to-lzqqvrwEYHIY2hFxPp2ludbjaSM4ZTcnbpcG3NIZwDh4N1r-7w3_hJwh94DRUif_AioGkyw</recordid><startdate>2012</startdate><enddate>2012</enddate><creator>JEONG, Yongchae</creator><creator>CHAUDHARY, Girdhari</creator><creator>LIM, Jongsik</creator><general>The Institute of Electronics, Information and Communication Engineers</general><general>Oxford University Press</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>2012</creationdate><title>A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network</title><author>JEONG, Yongchae ; CHAUDHARY, Girdhari ; LIM, Jongsik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c546t-bcf59114ebe11a9d167830da42c839430974907512065bd12884dbec7a6c4c753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bands</topic><topic>Circuit properties</topic><topic>class-F</topic><topic>dual band</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Gallium nitrides</topic><topic>Harmonics</topic><topic>Matching</topic><topic>Networks</topic><topic>power amplifier</topic><topic>Power amplifiers</topic><topic>Power electronics, power supplies</topic><topic>Stopping</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JEONG, Yongchae</creatorcontrib><creatorcontrib>CHAUDHARY, Girdhari</creatorcontrib><creatorcontrib>LIM, Jongsik</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JEONG, Yongchae</au><au>CHAUDHARY, Girdhari</au><au>LIM, Jongsik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2012</date><risdate>2012</risdate><volume>E95.C</volume><issue>11</issue><spage>1783</spage><epage>1789</epage><pages>1783-1789</pages><issn>0916-8524</issn><eissn>1745-1353</eissn><abstract>A class-F high efficiency GaN power amplifier (PA) for dual band operation at 2.14GHz and 2.35GHz is proposed. A novel dual band harmonic-rejection load network, which controls the terminating impedances of the second and third harmonics, and contributes greatly to efficiency improvement of PA, is described. In addition, a matching network which guarantees the high efficiency and gain of PA for the desired dual bands is designed. The proposed load network has the harmonic rejection of more than 24dB which is sufficient for rejecting harmonics, and an insertion loss of less than 0.11dB. The dual band matching network for the maximum output power results in the measured highest output power for each operating frequency. The fabricated class-F GaN PA has 43dBm-65.4% and 43dBm-63.9% of output power - efficiency at the desired dual frequencies.</abstract><cop>Oxford</cop><pub>The Institute of Electronics, Information and Communication Engineers</pub><doi>10.1587/transele.E95.C.1783</doi><tpages>7</tpages></addata></record> |
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| identifier | ISSN: 0916-8524 |
| ispartof | IEICE Transactions on Electronics, 2012/11/01, Vol.E95.C(11), pp.1783-1789 |
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| subjects | Amplifiers Applied sciences Bands Circuit properties class-F dual band Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Gain Gallium nitrides Harmonics Matching Networks power amplifier Power amplifiers Power electronics, power supplies Stopping |
| title | A Dual Band High Efficiency Class-F GaN Power Amplifier Using a Novel Harmonic-Rejection Load Network |
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