Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy

The channel temperature of the AlGaN/GaN high-electron-mobility transistor was measured by infrared microscopy in an uncapped package. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. The thermal resistanc...

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Veröffentlicht in:	Optics communications 2013-03, Vol.291, p.104-109
Hauptverfasser:	Zhao, Miao, Liu, Xinyu, Zheng, Yingkui, Peng, Mingzeng, Ouyang, Sihua, Li, Yankui, Wei, Ke
Format:	Artikel
Sprache:	eng
Schlagworte:	AlGaN/GaN HEMT Aluminum gallium nitrides Channel-temperature Channels Devices Gallium nitrides Heat transfer Infrared microscopy Microscopy Reliability Thermal resistance Transistors
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