Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy
The channel temperature of the AlGaN/GaN high-electron-mobility transistor was measured by infrared microscopy in an uncapped package. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. The thermal resistanc...
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| Veröffentlicht in: | Optics communications 2013-03, Vol.291, p.104-109 |
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| container_title | Optics communications |
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| creator | Zhao, Miao Liu, Xinyu Zheng, Yingkui Peng, Mingzeng Ouyang, Sihua Li, Yankui Wei, Ke |
| description | The channel temperature of the AlGaN/GaN high-electron-mobility transistor was measured by infrared microscopy in an uncapped package. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. The thermal resistance was determined for a multi-finger device. The correlation of the dissipated power and the base plate temperature, and peak channel temperature of different device structures are compared. Screening conditions were advanced to apply sufficient stress during the reliability test. IR microscopy facilitates the optimization of the device to reduce the thermal resistance, and it facilitates the study of how the device parameters affect reliability. |
| doi_str_mv | 10.1016/j.optcom.2012.10.077 |
| format | Article |
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The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. The thermal resistance was determined for a multi-finger device. The correlation of the dissipated power and the base plate temperature, and peak channel temperature of different device structures are compared. Screening conditions were advanced to apply sufficient stress during the reliability test. IR microscopy facilitates the optimization of the device to reduce the thermal resistance, and it facilitates the study of how the device parameters affect reliability.</description><identifier>ISSN: 0030-4018</identifier><identifier>EISSN: 1873-0310</identifier><identifier>DOI: 10.1016/j.optcom.2012.10.077</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>AlGaN/GaN HEMT ; Aluminum gallium nitrides ; Channel-temperature ; Channels ; Devices ; Gallium nitrides ; Heat transfer ; Infrared microscopy ; Microscopy ; Reliability ; Thermal resistance ; Transistors</subject><ispartof>Optics communications, 2013-03, Vol.291, p.104-109</ispartof><rights>2012 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-80cb15f92ab0d3177b244220e130634918c20bc8e8d8a2b2ced409081d7c32c73</citedby><cites>FETCH-LOGICAL-c339t-80cb15f92ab0d3177b244220e130634918c20bc8e8d8a2b2ced409081d7c32c73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0030401812012667$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Zhao, Miao</creatorcontrib><creatorcontrib>Liu, Xinyu</creatorcontrib><creatorcontrib>Zheng, Yingkui</creatorcontrib><creatorcontrib>Peng, Mingzeng</creatorcontrib><creatorcontrib>Ouyang, Sihua</creatorcontrib><creatorcontrib>Li, Yankui</creatorcontrib><creatorcontrib>Wei, Ke</creatorcontrib><title>Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy</title><title>Optics communications</title><description>The channel temperature of the AlGaN/GaN high-electron-mobility transistor was measured by infrared microscopy in an uncapped package. The behaviors of the channel temperature distribution, the peak channel temperature and the thermal resistance under DC bias were investigated. The thermal resistance was determined for a multi-finger device. The correlation of the dissipated power and the base plate temperature, and peak channel temperature of different device structures are compared. Screening conditions were advanced to apply sufficient stress during the reliability test. IR microscopy facilitates the optimization of the device to reduce the thermal resistance, and it facilitates the study of how the device parameters affect reliability.</description><subject>AlGaN/GaN HEMT</subject><subject>Aluminum gallium nitrides</subject><subject>Channel-temperature</subject><subject>Channels</subject><subject>Devices</subject><subject>Gallium nitrides</subject><subject>Heat transfer</subject><subject>Infrared microscopy</subject><subject>Microscopy</subject><subject>Reliability</subject><subject>Thermal resistance</subject><subject>Transistors</subject><issn>0030-4018</issn><issn>1873-0310</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kEFLxDAQhYMouK7-Aw89eml3Jum26UVYFl2FRS8rHkOapm6WtqlJV-i_N6WePQwDw3uPNx8h9wgJAmarU2L7Qdk2oYA0nBLI8wuyQJ6zGBjCJVkAMIhTQH5Nbrw_AQCmjC_I5-GoXSubSHayGb3xka2jTbOTb6sw0dF8HWPdaDU428WtLU1jhjEanOyCdrDOR-UYma520ukqao1y1ivbj7fkqpaN13d_e0k-np8O25d4_7573W72sWKsGGIOqsR1XVBZQsUwz0uappSCRgYZSwvkikKpuOYVl7SkSlcpFMCxyhWjKmdL8jDn9s5-n7UfRGu80k0jO23PXiDDdZZxzNdBms7SqaN3uha9M610o0AQE0dxEjNHMXGcroFjsD3ONh3e-DHaCa-M7kIT4wIXUVnzf8AvR7V99g</recordid><startdate>20130315</startdate><enddate>20130315</enddate><creator>Zhao, Miao</creator><creator>Liu, Xinyu</creator><creator>Zheng, Yingkui</creator><creator>Peng, Mingzeng</creator><creator>Ouyang, Sihua</creator><creator>Li, Yankui</creator><creator>Wei, Ke</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130315</creationdate><title>Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy</title><author>Zhao, Miao ; Liu, Xinyu ; Zheng, Yingkui ; Peng, Mingzeng ; Ouyang, Sihua ; Li, Yankui ; Wei, Ke</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-80cb15f92ab0d3177b244220e130634918c20bc8e8d8a2b2ced409081d7c32c73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>AlGaN/GaN HEMT</topic><topic>Aluminum gallium nitrides</topic><topic>Channel-temperature</topic><topic>Channels</topic><topic>Devices</topic><topic>Gallium nitrides</topic><topic>Heat transfer</topic><topic>Infrared microscopy</topic><topic>Microscopy</topic><topic>Reliability</topic><topic>Thermal resistance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhao, Miao</creatorcontrib><creatorcontrib>Liu, Xinyu</creatorcontrib><creatorcontrib>Zheng, Yingkui</creatorcontrib><creatorcontrib>Peng, Mingzeng</creatorcontrib><creatorcontrib>Ouyang, Sihua</creatorcontrib><creatorcontrib>Li, Yankui</creatorcontrib><creatorcontrib>Wei, Ke</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optics communications</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhao, Miao</au><au>Liu, Xinyu</au><au>Zheng, Yingkui</au><au>Peng, Mingzeng</au><au>Ouyang, Sihua</au><au>Li, Yankui</au><au>Wei, Ke</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy</atitle><jtitle>Optics communications</jtitle><date>2013-03-15</date><risdate>2013</risdate><volume>291</volume><spage>104</spage><epage>109</epage><pages>104-109</pages><issn>0030-4018</issn><eissn>1873-0310</eissn><abstract>The channel temperature of the AlGaN/GaN high-electron-mobility transistor was measured by infrared microscopy in an uncapped package. 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| subjects | AlGaN/GaN HEMT Aluminum gallium nitrides Channel-temperature Channels Devices Gallium nitrides Heat transfer Infrared microscopy Microscopy Reliability Thermal resistance Transistors |
| title | Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy |
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