Chemical and Electrical Properties of Low-Temperature Solution-Processed In-Ga-Zn-O Thin-Film Transistors
We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn 2 O 5 films were formed by a spin-coating method and postbaked at low temperature (95°C). The morphology of the IG...
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| Veröffentlicht in: | IEEE electron device letters 2010-04, Vol.31 (4), p.329-331 |
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| creator | Ya-Hui Yang Yang, S.S. Chen-Yen Kao Kan-San Chou |
| description | We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn 2 O 5 films were formed by a spin-coating method and postbaked at low temperature (95°C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 10 5 A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm 2 /V · s and ON-OFF current ratio over 106 are very promising for TFT applications. |
| doi_str_mv | 10.1109/LED.2010.2041425 |
| format | Article |
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Polycrystallized InGaZn 2 O 5 films were formed by a spin-coating method and postbaked at low temperature (95°C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 10 5 A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm 2 /V · s and ON-OFF current ratio over 106 are very promising for TFT applications.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2041425</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Chemicals ; Compound structure devices ; Cross sections ; Devices ; Drains ; Electrical properties ; Electronics ; Exact sciences and technology ; Glass ; Grain size ; Indium-gallium-zinc oxide (IGZO) ; metal-insulator-oxide-semiconductor devices ; Morphology ; Nanoparticles ; Pulsed laser deposition ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; solution-processed ; Sputtering ; Temperature ; Thin film transistors ; thin-film transistors (TFTs) ; Threshold voltage ; Transistors ; Zinc</subject><ispartof>IEEE electron device letters, 2010-04, Vol.31 (4), p.329-331</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Apr 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2978-d66c2476c367f6b2f40eea0de431c08201b6c65c7d1387327caeecf0ab9a5d833</citedby><cites>FETCH-LOGICAL-c2978-d66c2476c367f6b2f40eea0de431c08201b6c65c7d1387327caeecf0ab9a5d833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5419109$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5419109$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22729136$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ya-Hui Yang</creatorcontrib><creatorcontrib>Yang, S.S.</creatorcontrib><creatorcontrib>Chen-Yen Kao</creatorcontrib><creatorcontrib>Kan-San Chou</creatorcontrib><title>Chemical and Electrical Properties of Low-Temperature Solution-Processed In-Ga-Zn-O Thin-Film Transistors</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn 2 O 5 films were formed by a spin-coating method and postbaked at low temperature (95°C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 10 5 A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm 2 /V · s and ON-OFF current ratio over 106 are very promising for TFT applications.</description><subject>Applied sciences</subject><subject>Chemicals</subject><subject>Compound structure devices</subject><subject>Cross sections</subject><subject>Devices</subject><subject>Drains</subject><subject>Electrical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Glass</subject><subject>Grain size</subject><subject>Indium-gallium-zinc oxide (IGZO)</subject><subject>metal-insulator-oxide-semiconductor devices</subject><subject>Morphology</subject><subject>Nanoparticles</subject><subject>Pulsed laser deposition</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>solution-processed</subject><subject>Sputtering</subject><subject>Temperature</subject><subject>Thin film transistors</subject><subject>thin-film transistors (TFTs)</subject><subject>Threshold voltage</subject><subject>Transistors</subject><subject>Zinc</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1LHEEQxRtRcNXcBS8DIZhLm-rv6WNYVyMsGMjmksvQ21ODLTPTm-4ZQv57W3fxkENORVX96sGrR8glgxvGwH5Zr25vOJSOg2SSqyOyYErVFJQWx2QBRjIqGOhTcpbzMwCT0sgFCcsnHIJ3feXGtlr16Kf01n5PcYdpCpir2FXr-IducCgTN80Jqx-xn6cQR1owjzljWz2M9N7RXyN9rDZPYaR3oR-qTXJjDnmKKV-Qk871GT8c6jn5ebfaLL_R9eP9w_LrmnpuTU1brT2XRnuhTae3vJOA6KBFKZiHuljcaq-VNy0TtRHceIfoO3Bb61RbC3FOrve6uxR_z5inZgjZY9-7EeOcG8s1t9rYupCf_0sywZRWEsAW9OM_6HOc01h8NAy4YUoKxQoFe8qnmHPCrtmlMLj0t0DNa0pNSal5Tak5pFROPh2EXS5v78q_fMjvd5wbbpnQhbvacwER39dKMltkxQtmiZlJ</recordid><startdate>20100401</startdate><enddate>20100401</enddate><creator>Ya-Hui Yang</creator><creator>Yang, S.S.</creator><creator>Chen-Yen Kao</creator><creator>Kan-San Chou</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100401</creationdate><title>Chemical and Electrical Properties of Low-Temperature Solution-Processed In-Ga-Zn-O Thin-Film Transistors</title><author>Ya-Hui Yang ; Yang, S.S. ; Chen-Yen Kao ; Kan-San Chou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2978-d66c2476c367f6b2f40eea0de431c08201b6c65c7d1387327caeecf0ab9a5d833</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Chemicals</topic><topic>Compound structure devices</topic><topic>Cross sections</topic><topic>Devices</topic><topic>Drains</topic><topic>Electrical properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Glass</topic><topic>Grain size</topic><topic>Indium-gallium-zinc oxide (IGZO)</topic><topic>metal-insulator-oxide-semiconductor devices</topic><topic>Morphology</topic><topic>Nanoparticles</topic><topic>Pulsed laser deposition</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>solution-processed</topic><topic>Sputtering</topic><topic>Temperature</topic><topic>Thin film transistors</topic><topic>thin-film transistors (TFTs)</topic><topic>Threshold voltage</topic><topic>Transistors</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ya-Hui Yang</creatorcontrib><creatorcontrib>Yang, S.S.</creatorcontrib><creatorcontrib>Chen-Yen Kao</creatorcontrib><creatorcontrib>Kan-San Chou</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ya-Hui Yang</au><au>Yang, S.S.</au><au>Chen-Yen Kao</au><au>Kan-San Chou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical and Electrical Properties of Low-Temperature Solution-Processed In-Ga-Zn-O Thin-Film Transistors</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-04-01</date><risdate>2010</risdate><volume>31</volume><issue>4</issue><spage>329</spage><epage>331</epage><pages>329-331</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We have fabricated a bottom-gate thin-film transistor (TFT) with the active layer of indium-gallium-zinc-oxide (IGZO) nanoparticles prepared from water solution. Polycrystallized InGaZn 2 O 5 films were formed by a spin-coating method and postbaked at low temperature (95°C). The morphology of the IGZO film indicates that not only are the grain size and shape uniform but also the cross section of the film appears dense, considering that the films were fabricated by a solution process at low temperature. The TFT device shows good switching ability, high drain current (> 10 5 A), and low threshold voltage (0.9 V). Its field-effect mobility of 2.3 cm 2 /V · s and ON-OFF current ratio over 106 are very promising for TFT applications.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2041425</doi><tpages>3</tpages></addata></record> |
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| subjects | Applied sciences Chemicals Compound structure devices Cross sections Devices Drains Electrical properties Electronics Exact sciences and technology Glass Grain size Indium-gallium-zinc oxide (IGZO) metal-insulator-oxide-semiconductor devices Morphology Nanoparticles Pulsed laser deposition Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution-processed Sputtering Temperature Thin film transistors thin-film transistors (TFTs) Threshold voltage Transistors Zinc |
| title | Chemical and Electrical Properties of Low-Temperature Solution-Processed In-Ga-Zn-O Thin-Film Transistors |
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