Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs
Reduction of parasitic capacitance in the gate region by adopting a cavity structure improved the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors (HEMTs). We achieved a high cutoff frequency f T of 517 GHz and a minimum noise figure NF min of 0.71 dB at 9...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-08, Vol.59 (8), p.2136-2141 |
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| container_end_page | 2141 |
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| container_issue | 8 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 59 |
| creator | Takahashi, T. Sato, M. Nakasha, Y. Hirose, T. Hara, N. |
| description | Reduction of parasitic capacitance in the gate region by adopting a cavity structure improved the high-frequency and noise characteristics of InAlAs/InGaAs high-electron mobility transistors (HEMTs). We achieved a high cutoff frequency f T of 517 GHz and a minimum noise figure NF min of 0.71 dB at 94 GHz even after passivation and interconnection process. Scaling of the gate-to-channel distance and gate-recess length is also effective in enhancing transconductance g m to improve f T and NF min . The cavity structure is a promising candidate that can help in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections. |
| doi_str_mv | 10.1109/TED.2012.2200254 |
| format | Article |
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We achieved a high cutoff frequency f T of 517 GHz and a minimum noise figure NF min of 0.71 dB at 94 GHz even after passivation and interconnection process. Scaling of the gate-to-channel distance and gate-recess length is also effective in enhancing transconductance g m to improve f T and NF min . The cavity structure is a promising candidate that can help in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2200254</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Cavity ; Cavity resonators ; Circuit properties ; cutoff frequency ; Design. Technologies. Operation analysis. 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We achieved a high cutoff frequency f T of 517 GHz and a minimum noise figure NF min of 0.71 dB at 94 GHz even after passivation and interconnection process. Scaling of the gate-to-channel distance and gate-recess length is also effective in enhancing transconductance g m to improve f T and NF min . The cavity structure is a promising candidate that can help in achieving high-performance millimeter-wave monolithic integrated circuits with multilayer interconnections.</description><subject>Applied sciences</subject><subject>Cavity</subject><subject>Cavity resonators</subject><subject>Circuit properties</subject><subject>cutoff frequency</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>high-electron mobility transistor (HEMT)</subject><subject>Holes</subject><subject>Indium gallium arsenides</subject><subject>Integrated circuits</subject><subject>Interconnection</subject><subject>Logic gates</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>MODFETs</subject><subject>Multilayers</subject><subject>Noise</subject><subject>noise figure</subject><subject>Noise levels</subject><subject>Parasitic capacitance</subject><subject>Resistance</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| subjects | Applied sciences Cavity Cavity resonators Circuit properties cutoff frequency Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronics Exact sciences and technology HEMTs High electron mobility transistors high-electron mobility transistor (HEMT) Holes Indium gallium arsenides Integrated circuits Interconnection Logic gates Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MODFETs Multilayers Noise noise figure Noise levels Parasitic capacitance Resistance Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Improvement of RF and Noise Characteristics Using a Cavity Structure in InAlAs/InGaAs HEMTs |
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