Voltage tunability of single-spin states in a quantum dot
Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the soli...
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| Veröffentlicht in: | Nature communications 2013, Vol.4 (1), p.1522-1522, Article 1522 |
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| creator | Bennett, Anthony J. Pooley, Matthew A. Cao, Yameng Sköld, Niklas Farrer, Ian Ritchie, David A. Shields, Andrew J. |
| description | Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy-levels in a single quantum dot by modifying how spins sense magnetic field. We find that the in-plane
g
-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole
g
-factor varies continuously. The device can change the sign of the in-plane
g
-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.
Manipulation of spins in the solid state is a promising avenue for quantum information and field sensing applications. Bennett
et al
. demonstrate voltage tunability of single-spin states in a quantum dot as a step towards universal control of a single spin with a single electrical gate. |
| doi_str_mv | 10.1038/ncomms2519 |
| format | Article |
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g
-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole
g
-factor varies continuously. The device can change the sign of the in-plane
g
-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.
Manipulation of spins in the solid state is a promising avenue for quantum information and field sensing applications. Bennett
et al
. demonstrate voltage tunability of single-spin states in a quantum dot as a step towards universal control of a single spin with a single electrical gate.</description><identifier>ISSN: 2041-1723</identifier><identifier>EISSN: 2041-1723</identifier><identifier>DOI: 10.1038/ncomms2519</identifier><identifier>PMID: 23443550</identifier><language>eng</language><publisher>London: Nature Publishing Group UK</publisher><subject>639/766/119 ; 639/925/357/1017 ; Humanities and Social Sciences ; multidisciplinary ; Science ; Science (multidisciplinary)</subject><ispartof>Nature communications, 2013, Vol.4 (1), p.1522-1522, Article 1522</ispartof><rights>Springer Nature Limited 2013</rights><rights>Copyright Nature Publishing Group Feb 2013</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c387t-62e8f16a565a8ee71b5d46773098a7f052daaefaebebcbb277a8bed639b56b0a3</citedby><cites>FETCH-LOGICAL-c387t-62e8f16a565a8ee71b5d46773098a7f052daaefaebebcbb277a8bed639b56b0a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1038/ncomms2519$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://doi.org/10.1038/ncomms2519$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,4025,27928,27929,27930,41125,42194,51581</link.rule.ids><linktorsrc>$$Uhttps://doi.org/10.1038/ncomms2519$$EView_record_in_Springer_Nature$$FView_record_in_$$GSpringer_Nature</linktorsrc><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23443550$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Bennett, Anthony J.</creatorcontrib><creatorcontrib>Pooley, Matthew A.</creatorcontrib><creatorcontrib>Cao, Yameng</creatorcontrib><creatorcontrib>Sköld, Niklas</creatorcontrib><creatorcontrib>Farrer, Ian</creatorcontrib><creatorcontrib>Ritchie, David A.</creatorcontrib><creatorcontrib>Shields, Andrew J.</creatorcontrib><title>Voltage tunability of single-spin states in a quantum dot</title><title>Nature communications</title><addtitle>Nat Commun</addtitle><addtitle>Nat Commun</addtitle><description>Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy-levels in a single quantum dot by modifying how spins sense magnetic field. We find that the in-plane
g
-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole
g
-factor varies continuously. The device can change the sign of the in-plane
g
-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.
Manipulation of spins in the solid state is a promising avenue for quantum information and field sensing applications. Bennett
et al
. demonstrate voltage tunability of single-spin states in a quantum dot as a step towards universal control of a single spin with a single electrical gate.</description><subject>639/766/119</subject><subject>639/925/357/1017</subject><subject>Humanities and Social Sciences</subject><subject>multidisciplinary</subject><subject>Science</subject><subject>Science 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Commun</addtitle><date>2013</date><risdate>2013</risdate><volume>4</volume><issue>1</issue><spage>1522</spage><epage>1522</epage><pages>1522-1522</pages><artnum>1522</artnum><issn>2041-1723</issn><eissn>2041-1723</eissn><abstract>Single spins in the solid state offer a unique opportunity to store and manipulate quantum information, and to perform quantum-enhanced sensing of local fields and charges. Optical control of these systems using techniques developed in atomic physics has yet to exploit all the advantages of the solid state. Here we demonstrate voltage tunability of the spin energy-levels in a single quantum dot by modifying how spins sense magnetic field. We find that the in-plane
g
-factor varies discontinuously for electrons, as more holes are loaded onto the dot. In contrast, the in-plane hole
g
-factor varies continuously. The device can change the sign of the in-plane
g
-factor of a single hole, at which point an avoided crossing is observed in the two spin eigenstates. This is exactly what is required for universal control of a single spin with a single electrical gate.
Manipulation of spins in the solid state is a promising avenue for quantum information and field sensing applications. Bennett
et al
. demonstrate voltage tunability of single-spin states in a quantum dot as a step towards universal control of a single spin with a single electrical gate.</abstract><cop>London</cop><pub>Nature Publishing Group UK</pub><pmid>23443550</pmid><doi>10.1038/ncomms2519</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record> |
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| title | Voltage tunability of single-spin states in a quantum dot |
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