CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors

► Low defect density AlGaN/GaN heterostructures are stable up to 40 CIP cycles. ► Edges at metallization or mesa steps are the weakest points of most passivations. ► A passivation scheme based on SiNx is compatible to conventional device processing. ► A SiNx based, CIP resistant passivation scheme e...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of biotechnology 2013-02, Vol.163 (4), p.354-361
Hauptverfasser:	Linkohr, St, Pletschen, W., Schwarz, S.U., Anzt, J., Cimalla, V., Ambacher, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Compounds - chemistry biocompatibility Biosensing Techniques - instrumentation Biosensing Techniques - methods biotechnology CIP test cleaning in place Diamond - chemistry Equipment Design Food Industry - instrumentation Food Industry - methods Gallium - chemistry Hydrogen-Ion Concentration ISFET nanocrystals Nanostructures - chemistry Passivation pH sensor silica sodium hydroxide Transistors, Electronic
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!