Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors

We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −8...

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Veröffentlicht in:Nano letters 2013-02, Vol.13 (2), p.481-485
Hauptverfasser: Yoshida, Kenji, Hamada, Ikutaro, Sakata, Shuichi, Umeno, Akinori, Tsukada, Masaru, Hirakawa, Kazuhiko
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container_end_page 485
container_issue 2
container_start_page 481
container_title Nano letters
container_volume 13
creator Yoshida, Kenji
Hamada, Ikutaro
Sakata, Shuichi
Umeno, Akinori
Tsukada, Masaru
Hirakawa, Kazuhiko
description We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.
doi_str_mv 10.1021/nl303871x
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fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1287888013</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1287888013</sourcerecordid><originalsourceid>FETCH-LOGICAL-a1165-3cc1a1f5fcac25d8a9fc731eaa996aa0d3260b24083d4daf12ce5d26a23379953</originalsourceid><addsrcrecordid>eNpFkU1OwzAQhS0EolBYcAGUDRKbgH_ixFmiCgpSWxaUdTR1JpEr1ylxgmDHHbghJ8EVpd3MPI2-GenNI-SC0RtGObt1VlChMvZxQE6YFDRO85wf7rRKBuTU-yWlNBeSHpMBF4JnSSZPCIyhw3jeO1hYjCbQ1hjNsIbOvGMUxg5tNIXaYde06I3vwGmMjItm5ufre5TSUGcmejGuDvvTxqLug5i34DZ00_ozclSB9Xi-7UPy-nA_Hz3Gk-fx0-huEgNjqYyF1gxYJSsNmstSQV7pTDAEyPMUgJaCp3TBE6pEmZRQMa5RljyF4CXLcymG5Prv7rpt3nr0XbEyXqO14LDpfcG4ypRSlImAXm7RfrHCsli3ZgXtZ_H_lgBcbQHwGmwV3Gjj91zGEimyZM-B9sWy6VsXHBaMFptYil0s4hflN33t</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1287888013</pqid></control><display><type>article</type><title>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</title><source>American Chemical Society</source><creator>Yoshida, Kenji ; Hamada, Ikutaro ; Sakata, Shuichi ; Umeno, Akinori ; Tsukada, Masaru ; Hirakawa, Kazuhiko</creator><creatorcontrib>Yoshida, Kenji ; Hamada, Ikutaro ; Sakata, Shuichi ; Umeno, Akinori ; Tsukada, Masaru ; Hirakawa, Kazuhiko</creatorcontrib><description>We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl303871x</identifier><identifier>PMID: 23327475</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electron states ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Magnetic properties and materials ; Materials science ; Methods of electronic structure calculations ; Physics ; Small particles and nanoscale materials ; Specific materials ; Studies of specific magnetic materials</subject><ispartof>Nano letters, 2013-02, Vol.13 (2), p.481-485</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl303871x$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl303871x$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=27145374$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23327475$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoshida, Kenji</creatorcontrib><creatorcontrib>Hamada, Ikutaro</creatorcontrib><creatorcontrib>Sakata, Shuichi</creatorcontrib><creatorcontrib>Umeno, Akinori</creatorcontrib><creatorcontrib>Tsukada, Masaru</creatorcontrib><creatorcontrib>Hirakawa, Kazuhiko</creatorcontrib><title>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron states</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Magnetic properties and materials</subject><subject>Materials science</subject><subject>Methods of electronic structure calculations</subject><subject>Physics</subject><subject>Small particles and nanoscale materials</subject><subject>Specific materials</subject><subject>Studies of specific magnetic materials</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkU1OwzAQhS0EolBYcAGUDRKbgH_ixFmiCgpSWxaUdTR1JpEr1ylxgmDHHbghJ8EVpd3MPI2-GenNI-SC0RtGObt1VlChMvZxQE6YFDRO85wf7rRKBuTU-yWlNBeSHpMBF4JnSSZPCIyhw3jeO1hYjCbQ1hjNsIbOvGMUxg5tNIXaYde06I3vwGmMjItm5ufre5TSUGcmejGuDvvTxqLug5i34DZ00_ozclSB9Xi-7UPy-nA_Hz3Gk-fx0-huEgNjqYyF1gxYJSsNmstSQV7pTDAEyPMUgJaCp3TBE6pEmZRQMa5RljyF4CXLcymG5Prv7rpt3nr0XbEyXqO14LDpfcG4ypRSlImAXm7RfrHCsli3ZgXtZ_H_lgBcbQHwGmwV3Gjj91zGEimyZM-B9sWy6VsXHBaMFptYil0s4hflN33t</recordid><startdate>20130213</startdate><enddate>20130213</enddate><creator>Yoshida, Kenji</creator><creator>Hamada, Ikutaro</creator><creator>Sakata, Shuichi</creator><creator>Umeno, Akinori</creator><creator>Tsukada, Masaru</creator><creator>Hirakawa, Kazuhiko</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20130213</creationdate><title>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</title><author>Yoshida, Kenji ; Hamada, Ikutaro ; Sakata, Shuichi ; Umeno, Akinori ; Tsukada, Masaru ; Hirakawa, Kazuhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a1165-3cc1a1f5fcac25d8a9fc731eaa996aa0d3260b24083d4daf12ce5d26a23379953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron states</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Magnetic properties and materials</topic><topic>Materials science</topic><topic>Methods of electronic structure calculations</topic><topic>Physics</topic><topic>Small particles and nanoscale materials</topic><topic>Specific materials</topic><topic>Studies of specific magnetic materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshida, Kenji</creatorcontrib><creatorcontrib>Hamada, Ikutaro</creatorcontrib><creatorcontrib>Sakata, Shuichi</creatorcontrib><creatorcontrib>Umeno, Akinori</creatorcontrib><creatorcontrib>Tsukada, Masaru</creatorcontrib><creatorcontrib>Hirakawa, Kazuhiko</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshida, Kenji</au><au>Hamada, Ikutaro</au><au>Sakata, Shuichi</au><au>Umeno, Akinori</au><au>Tsukada, Masaru</au><au>Hirakawa, Kazuhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-02-13</date><risdate>2013</risdate><volume>13</volume><issue>2</issue><spage>481</spage><epage>485</epage><pages>481-485</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>23327475</pmid><doi>10.1021/nl303871x</doi><tpages>5</tpages></addata></record>
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electron states
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Magnetic properties and materials
Materials science
Methods of electronic structure calculations
Physics
Small particles and nanoscale materials
Specific materials
Studies of specific magnetic materials
title Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T20%3A22%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Gate-Tunable%20Large%20Negative%20Tunnel%20Magnetoresistance%20in%20Ni%E2%80%93C60%E2%80%93Ni%20Single%20Molecule%20Transistors&rft.jtitle=Nano%20letters&rft.au=Yoshida,%20Kenji&rft.date=2013-02-13&rft.volume=13&rft.issue=2&rft.spage=481&rft.epage=485&rft.pages=481-485&rft.issn=1530-6984&rft.eissn=1530-6992&rft_id=info:doi/10.1021/nl303871x&rft_dat=%3Cproquest_pubme%3E1287888013%3C/proquest_pubme%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1287888013&rft_id=info:pmid/23327475&rfr_iscdi=true