Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors
We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −8...
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Veröffentlicht in: | Nano letters 2013-02, Vol.13 (2), p.481-485 |
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creator | Yoshida, Kenji Hamada, Ikutaro Sakata, Shuichi Umeno, Akinori Tsukada, Masaru Hirakawa, Kazuhiko |
description | We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR. |
doi_str_mv | 10.1021/nl303871x |
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The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl303871x</identifier><identifier>PMID: 23327475</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electron states ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals ; Exact sciences and technology ; Fullerenes and related materials; diamonds, graphite ; Magnetic properties and materials ; Materials science ; Methods of electronic structure calculations ; Physics ; Small particles and nanoscale materials ; Specific materials ; Studies of specific magnetic materials</subject><ispartof>Nano letters, 2013-02, Vol.13 (2), p.481-485</ispartof><rights>Copyright © 2013 American Chemical Society</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://pubs.acs.org/doi/pdf/10.1021/nl303871x$$EPDF$$P50$$Gacs$$H</linktopdf><linktohtml>$$Uhttps://pubs.acs.org/doi/10.1021/nl303871x$$EHTML$$P50$$Gacs$$H</linktohtml><link.rule.ids>314,780,784,27076,27924,27925,56738,56788</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27145374$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23327475$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Yoshida, Kenji</creatorcontrib><creatorcontrib>Hamada, Ikutaro</creatorcontrib><creatorcontrib>Sakata, Shuichi</creatorcontrib><creatorcontrib>Umeno, Akinori</creatorcontrib><creatorcontrib>Tsukada, Masaru</creatorcontrib><creatorcontrib>Hirakawa, Kazuhiko</creatorcontrib><title>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</title><title>Nano letters</title><addtitle>Nano Lett</addtitle><description>We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electron states</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Exact sciences and technology</subject><subject>Fullerenes and related materials; diamonds, graphite</subject><subject>Magnetic properties and materials</subject><subject>Materials science</subject><subject>Methods of electronic structure calculations</subject><subject>Physics</subject><subject>Small particles and nanoscale materials</subject><subject>Specific materials</subject><subject>Studies of specific magnetic materials</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpFkU1OwzAQhS0EolBYcAGUDRKbgH_ixFmiCgpSWxaUdTR1JpEr1ylxgmDHHbghJ8EVpd3MPI2-GenNI-SC0RtGObt1VlChMvZxQE6YFDRO85wf7rRKBuTU-yWlNBeSHpMBF4JnSSZPCIyhw3jeO1hYjCbQ1hjNsIbOvGMUxg5tNIXaYde06I3vwGmMjItm5ufre5TSUGcmejGuDvvTxqLug5i34DZ00_ozclSB9Xi-7UPy-nA_Hz3Gk-fx0-huEgNjqYyF1gxYJSsNmstSQV7pTDAEyPMUgJaCp3TBE6pEmZRQMa5RljyF4CXLcymG5Prv7rpt3nr0XbEyXqO14LDpfcG4ypRSlImAXm7RfrHCsli3ZgXtZ_H_lgBcbQHwGmwV3Gjj91zGEimyZM-B9sWy6VsXHBaMFptYil0s4hflN33t</recordid><startdate>20130213</startdate><enddate>20130213</enddate><creator>Yoshida, Kenji</creator><creator>Hamada, Ikutaro</creator><creator>Sakata, Shuichi</creator><creator>Umeno, Akinori</creator><creator>Tsukada, Masaru</creator><creator>Hirakawa, Kazuhiko</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20130213</creationdate><title>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</title><author>Yoshida, Kenji ; Hamada, Ikutaro ; Sakata, Shuichi ; Umeno, Akinori ; Tsukada, Masaru ; Hirakawa, Kazuhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a1165-3cc1a1f5fcac25d8a9fc731eaa996aa0d3260b24083d4daf12ce5d26a23379953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electron states</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals</topic><topic>Exact sciences and technology</topic><topic>Fullerenes and related materials; diamonds, graphite</topic><topic>Magnetic properties and materials</topic><topic>Materials science</topic><topic>Methods of electronic structure calculations</topic><topic>Physics</topic><topic>Small particles and nanoscale materials</topic><topic>Specific materials</topic><topic>Studies of specific magnetic materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yoshida, Kenji</creatorcontrib><creatorcontrib>Hamada, Ikutaro</creatorcontrib><creatorcontrib>Sakata, Shuichi</creatorcontrib><creatorcontrib>Umeno, Akinori</creatorcontrib><creatorcontrib>Tsukada, Masaru</creatorcontrib><creatorcontrib>Hirakawa, Kazuhiko</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yoshida, Kenji</au><au>Hamada, Ikutaro</au><au>Sakata, Shuichi</au><au>Umeno, Akinori</au><au>Tsukada, Masaru</au><au>Hirakawa, Kazuhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2013-02-13</date><risdate>2013</risdate><volume>13</volume><issue>2</issue><spage>481</spage><epage>485</epage><pages>481-485</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We have fabricated single C60 molecule transistors with ferromagnetic Ni leads (FM-SMTs) by using an electrical break junction method and investigated their magnetotransport. The FM-SMTs exhibited clear gate-dependent hysteretic tunnel magnetoresistance (TMR) and the TMR values reached as high as −80%. The polarity of the TMR was found to be always negative over the entire bias range studied here. Density functional theory calculations show that hybridization between the Ni substrate states and the C60 molecular orbitals generates an antiferromagnetic configuration in the local density of states near the Fermi level, which gives a reasonable explanation for the observed negative TMR.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>23327475</pmid><doi>10.1021/nl303871x</doi><tpages>5</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electron states Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals Exact sciences and technology Fullerenes and related materials diamonds, graphite Magnetic properties and materials Materials science Methods of electronic structure calculations Physics Small particles and nanoscale materials Specific materials Studies of specific magnetic materials |
title | Gate-Tunable Large Negative Tunnel Magnetoresistance in Ni–C60–Ni Single Molecule Transistors |
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