High-efficiency clean EUV plasma source at 10-30 nm, driven by a long-pulse-width excimer laser
A long-pulse-width high-output energy (120 ns FWHM, 7 J) XeCl laser has been focused on thin tape targets (Cu and Ta) to generate more than 100-ns-long (FWHM) EUV pulses in the 10--30 nm spectral region, suitable for projection microlithography. The conversion efficiency was more than 20% over a 2*p...
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Veröffentlicht in: | Applied physics. B, Lasers and optics Lasers and optics, 2003-03, Vol.76 (3), p.277-284 |
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Sprache: | eng |
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