Facet degradation of high-power diode laser arrays

Micro-Raman facet temperatures of high-power diode lasers with different waveguide architectures are compared. For regular operation conditions, the thermal behavior of 'unaged' arrays emitting in the 808-nm wavelength region with different architectures is similar, however, with an increa...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2000-04, Vol.70 (4), p.377-381
Hauptverfasser:	TOMM, J. W, THAMM, E, BÄRWOLFF, A, ELSAESSER, T, LUFT, J, BAEUMLER, M, MUELLER, S, JANTZ, W, RECHENBERG, I, ERBERT, G
Format:	Artikel
Sprache:	eng
Schlagworte:	Architecture Arrays Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Devices Diode lasers Emittance Exact sciences and technology Failure Fundamental areas of phenomenology (including applications) Iii-v and ii-vi semiconductors Infrared and raman spectra and scattering Lasers Mathematical analysis Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optics Physical properties of thin films, nonelectronic Physics Semiconductor lasers laser diodes Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thermal stability thermal effects Wavelengths
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