Second-harmonic spectroscopy of electronic structure of Si/SiO2 multiple quantum wells
Size effects in the resonant nonlinear optical response of amorphous Si/SiO2 multiple quantum wells (MQW) are studied by second-harmonic generation (SHG) spectroscopy in a spectral interval of second-harmonic photon energies from 2.5 to 3.4 eV. The sensitivity of SHG spectroscopy to thickness-depend...
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| Veröffentlicht in: | Applied physics. B, Lasers and optics Lasers and optics, 2002-05, Vol.74 (7-8), p.671-675 |
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| container_title | Applied physics. B, Lasers and optics |
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| creator | Dolgova, T.V. Avramenko, V.G. Nikulin, A.A. Marowsky, G. Pudonin, A.F. Fedyanin, A.A. Aktsipetrov, O.A. |
| description | Size effects in the resonant nonlinear optical response of amorphous Si/SiO2 multiple quantum wells (MQW) are studied by second-harmonic generation (SHG) spectroscopy in a spectral interval of second-harmonic photon energies from 2.5 to 3.4 eV. The sensitivity of SHG spectroscopy to thickness-dependent electronic structure (sub-band energy position and density of states line shape) of MQW is demonstrated. A monotonic red shift of central energies of SHG resonances by 120 m eV upon increase of the well thickness from 2.5 to 10 A is observed. This is interpreted as a size dependence of the position of singularities in the combined density of states for a 2D gas of electrons moving in an effective potential well. It is shown that, for agreement with experiment, the simplest (rectangular) shape of the well should be modified in order to take into account the lattice-potential distortion at the interfaces. |
| doi_str_mv | 10.1007/s00340-002-0916-6 |
| format | Article |
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The sensitivity of SHG spectroscopy to thickness-dependent electronic structure (sub-band energy position and density of states line shape) of MQW is demonstrated. A monotonic red shift of central energies of SHG resonances by 120 m eV upon increase of the well thickness from 2.5 to 10 A is observed. This is interpreted as a size dependence of the position of singularities in the combined density of states for a 2D gas of electrons moving in an effective potential well. 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B, Lasers and optics</title><description>Size effects in the resonant nonlinear optical response of amorphous Si/SiO2 multiple quantum wells (MQW) are studied by second-harmonic generation (SHG) spectroscopy in a spectral interval of second-harmonic photon energies from 2.5 to 3.4 eV. The sensitivity of SHG spectroscopy to thickness-dependent electronic structure (sub-band energy position and density of states line shape) of MQW is demonstrated. A monotonic red shift of central energies of SHG resonances by 120 m eV upon increase of the well thickness from 2.5 to 10 A is observed. This is interpreted as a size dependence of the position of singularities in the combined density of states for a 2D gas of electrons moving in an effective potential well. It is shown that, for agreement with experiment, the simplest (rectangular) shape of the well should be modified in order to take into account the lattice-potential distortion at the interfaces.</description><subject>Density of states</subject><subject>Doppler effect</subject><subject>Electronic structure</subject><subject>Intervals</subject><subject>Photons</subject><subject>Quantum wells</subject><subject>Silicon dioxide</subject><subject>Spectroscopy</subject><issn>0946-2171</issn><issn>1432-0649</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotkE1PwzAMhiMEEmPwA7j1yCUsTtO0PaKJL2nSDgOuUZK6oqhtuiQV2r8n2_DFsv3Kfv0Qcg_sERgrV4GxXDDKGKesBknlBVmAyFMlRX1JFqwWknIo4ZrchPDDUsiqWpCvHVo3NvRb-8GNnc3ChDZ6F6ybDplrM-xP9WkU_Wzj7PHY33WrXbfl2TD3sZt6zPazHuM8ZL_Y9-GWXLW6D3j3n5fk8-X5Y_1GN9vX9_XThlpeykil0TUTBpqiKMAmTyWvGm00lBVWDdNosBBG89qgsdCA1UnDGwSTm0a0kC_Jw3nv5N1-xhDV0AWbHOgR3RwU8CqXVZGQJCmcpTZ9Fzy2avLdoP1BAVNHhurMUKUL6shQyfwPy6RmNA</recordid><startdate>200205</startdate><enddate>200205</enddate><creator>Dolgova, T.V.</creator><creator>Avramenko, V.G.</creator><creator>Nikulin, A.A.</creator><creator>Marowsky, G.</creator><creator>Pudonin, A.F.</creator><creator>Fedyanin, A.A.</creator><creator>Aktsipetrov, O.A.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>200205</creationdate><title>Second-harmonic spectroscopy of electronic structure of Si/SiO2 multiple quantum wells</title><author>Dolgova, T.V. ; Avramenko, V.G. ; Nikulin, A.A. ; Marowsky, G. ; Pudonin, A.F. ; Fedyanin, A.A. ; Aktsipetrov, O.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c276t-6ba904b1d5551c000728daba178e8d0aebe54ba29bebc1d1ca0002de1b3bd4f13</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Density of states</topic><topic>Doppler effect</topic><topic>Electronic structure</topic><topic>Intervals</topic><topic>Photons</topic><topic>Quantum wells</topic><topic>Silicon dioxide</topic><topic>Spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dolgova, T.V.</creatorcontrib><creatorcontrib>Avramenko, V.G.</creatorcontrib><creatorcontrib>Nikulin, A.A.</creatorcontrib><creatorcontrib>Marowsky, G.</creatorcontrib><creatorcontrib>Pudonin, A.F.</creatorcontrib><creatorcontrib>Fedyanin, A.A.</creatorcontrib><creatorcontrib>Aktsipetrov, O.A.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. 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The sensitivity of SHG spectroscopy to thickness-dependent electronic structure (sub-band energy position and density of states line shape) of MQW is demonstrated. A monotonic red shift of central energies of SHG resonances by 120 m eV upon increase of the well thickness from 2.5 to 10 A is observed. This is interpreted as a size dependence of the position of singularities in the combined density of states for a 2D gas of electrons moving in an effective potential well. It is shown that, for agreement with experiment, the simplest (rectangular) shape of the well should be modified in order to take into account the lattice-potential distortion at the interfaces.</abstract><doi>10.1007/s00340-002-0916-6</doi><tpages>5</tpages></addata></record> |
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| ispartof | Applied physics. B, Lasers and optics, 2002-05, Vol.74 (7-8), p.671-675 |
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| subjects | Density of states Doppler effect Electronic structure Intervals Photons Quantum wells Silicon dioxide Spectroscopy |
| title | Second-harmonic spectroscopy of electronic structure of Si/SiO2 multiple quantum wells |
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