Second harmonic generation in AlGaN, GaN and AlxGa1-xN/GaN multiple quantum well structures

Second harmonic generation coefficients of GaN and AlxGa1--xN (x=0.08) thin films deposited by MOCVD on a sapphire 0001 substrate were deduced through the standard Maker fringes method. Measurements were performed at {/content/8JTW42TBETUR78JA/xxlarge955.gif}=1064 nm using a Nd:YAG Q-Switched laser....

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Veröffentlicht in:	Applied physics. B, Lasers and optics Lasers and optics, 2004-09, Vol.79 (5), p.611-615
Hauptverfasser:	PASSERI, D, LARCIPRETE, M. C, BELARDINI, A, PAOLONI, S, PASSASEO, A, SIBILIA, C, MICHELOTTI, F
Format:	Artikel
Sprache:	eng
Schlagworte:	Beams (radiation) Condensed matter: electronic structure, electrical, magnetic, and optical properties Deposition Exact sciences and technology Frequency conversion harmonic generation, including high-order harmonic generation Fundamental areas of phenomenology (including applications) Gallium nitrides Iii-v semiconductors Lasers Nonlinear optics Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Optics Physics Quantum wells Reflectivity Second harmonic generation Thin films
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