Characteristics of ZnO epilayer on the post-annealed buffer layer on GaN/sapphire substrate by pulsed laser deposition

We employed epi-GaN substrates for ZnO film growth, and studied the deposition and post-annealing effects. ZnO films were grown by pulsed laser deposition (PLD) method. The as-grown films were annealed for one hour under atmospheric pressure air. ZnO morphologies after annealing were investigated an...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2008-11, Vol.93 (3), p.697-703
Hauptverfasser:	Sakano, Tatsunori, Fukuoka, Hiroki, Yata, Yoshihiro, Saiki, Toshiharu, Obara, Minoru
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Buffer layers Carrier density Characterization and Evaluation of Materials Condensed Matter Physics Gallium nitrides Luminescence Machines Manufacturing Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Pulsed laser deposition Sapphire Surfaces and Interfaces Thin Films Zinc oxide
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