A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs
► Investigation of hot carrier effects in inversion mode and junctionless transistors. ► Device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. ► Device degradation is more significant in IM transistor than in IM transistor at high stress gate volta...
Gespeichert in:
| Veröffentlicht in: | Solid-state electronics 2013-01, Vol.79, p.253-257 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 257 |
|---|---|
| container_issue | |
| container_start_page | 253 |
| container_title | Solid-state electronics |
| container_volume | 79 |
| creator | Lee, Sueng Min Kim, Jin Young Yu, Chong Gun Park, Jong Tae |
| description | ► Investigation of hot carrier effects in inversion mode and junctionless transistors. ► Device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. ► Device degradation is more significant in IM transistor than in IM transistor at high stress gate voltage.
A comparative study on the hot-carrier degradation between inversion mode and junctionless n-channel multiple gate MOSFET has been performed experimentally. The device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. However, this trend is reversed at high stress gate voltage. The highest degradation rate is found to occur at VG=VFB in JL transistors and at classical stress bias conditions (VG=VD/2) in IM transistor. 3-Dimensional device simulation is used to explain the observed results. |
| doi_str_mv | 10.1016/j.sse.2012.07.001 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1283661746</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0038110112002328</els_id><sourcerecordid>1283661746</sourcerecordid><originalsourceid>FETCH-LOGICAL-c459t-79ba6a2b903ea7325113136cd3bb41817c35ad522e919b552c02d3fe1fed32cf3</originalsourceid><addsrcrecordid>eNp9kMFq3DAQhkVpINskD5CbLoVe7M5Ia9mmpxDatJCQS3IWsjSmWrzWVmMv5O2rZUOPhYGB4ftnmE-IW4QaAc3XXc1MtQJUNbQ1AH4QG-zavlJbaD6KDYDuKizopfjEvAMAZRA24vVO-rQ_uOyWeCTJyxreZJrl77RI73KOlCWNI_mFZZxLHSlzTHO1T4Gkm4PcrbNfymQiZvm0Pvz4_sLX4mJ0E9PNe78Sr2V8_7N6fH74dX_3WPlt0y9V2w_OODX0oMm1WjWIGrXxQQ_DFjtsvW5caJSiHvuhaZQHFfRIOFLQyo_6Snw57z3k9GclXuw-sqdpcjOllS2qThuD7dYUFM-oz4k502gPOe5dfrMI9qTQ7mxRaE8KLbS2KCyZz-_rHXs3jdnNPvK_oDKmA6VP3LczR-XXY1Fm2UeaPYWYizkbUvzPlb_7AIYf</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1283661746</pqid></control><display><type>article</type><title>A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs</title><source>ScienceDirect Journals (5 years ago - present)</source><creator>Lee, Sueng Min ; Kim, Jin Young ; Yu, Chong Gun ; Park, Jong Tae</creator><creatorcontrib>Lee, Sueng Min ; Kim, Jin Young ; Yu, Chong Gun ; Park, Jong Tae</creatorcontrib><description>► Investigation of hot carrier effects in inversion mode and junctionless transistors. ► Device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. ► Device degradation is more significant in IM transistor than in IM transistor at high stress gate voltage.
A comparative study on the hot-carrier degradation between inversion mode and junctionless n-channel multiple gate MOSFET has been performed experimentally. The device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. However, this trend is reversed at high stress gate voltage. The highest degradation rate is found to occur at VG=VFB in JL transistors and at classical stress bias conditions (VG=VD/2) in IM transistor. 3-Dimensional device simulation is used to explain the observed results.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2012.07.001</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; Degradation ; Devices ; Electric potential ; Electronics ; Exact sciences and technology ; Gates ; Hot-carrier effects ; Inversion-mode transistor ; Junctionless transistor ; Multiple-gate MOSFET ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Stresses ; Transistors ; Voltage</subject><ispartof>Solid-state electronics, 2013-01, Vol.79, p.253-257</ispartof><rights>2012 Elsevier Ltd</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c459t-79ba6a2b903ea7325113136cd3bb41817c35ad522e919b552c02d3fe1fed32cf3</citedby><cites>FETCH-LOGICAL-c459t-79ba6a2b903ea7325113136cd3bb41817c35ad522e919b552c02d3fe1fed32cf3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.sse.2012.07.001$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27922,27923,45993</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26680231$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Lee, Sueng Min</creatorcontrib><creatorcontrib>Kim, Jin Young</creatorcontrib><creatorcontrib>Yu, Chong Gun</creatorcontrib><creatorcontrib>Park, Jong Tae</creatorcontrib><title>A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs</title><title>Solid-state electronics</title><description>► Investigation of hot carrier effects in inversion mode and junctionless transistors. ► Device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. ► Device degradation is more significant in IM transistor than in IM transistor at high stress gate voltage.
A comparative study on the hot-carrier degradation between inversion mode and junctionless n-channel multiple gate MOSFET has been performed experimentally. The device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. However, this trend is reversed at high stress gate voltage. The highest degradation rate is found to occur at VG=VFB in JL transistors and at classical stress bias conditions (VG=VD/2) in IM transistor. 3-Dimensional device simulation is used to explain the observed results.</description><subject>Applied sciences</subject><subject>Degradation</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>Hot-carrier effects</subject><subject>Inversion-mode transistor</subject><subject>Junctionless transistor</subject><subject>Multiple-gate MOSFET</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Stresses</subject><subject>Transistors</subject><subject>Voltage</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kMFq3DAQhkVpINskD5CbLoVe7M5Ia9mmpxDatJCQS3IWsjSmWrzWVmMv5O2rZUOPhYGB4ftnmE-IW4QaAc3XXc1MtQJUNbQ1AH4QG-zavlJbaD6KDYDuKizopfjEvAMAZRA24vVO-rQ_uOyWeCTJyxreZJrl77RI73KOlCWNI_mFZZxLHSlzTHO1T4Gkm4PcrbNfymQiZvm0Pvz4_sLX4mJ0E9PNe78Sr2V8_7N6fH74dX_3WPlt0y9V2w_OODX0oMm1WjWIGrXxQQ_DFjtsvW5caJSiHvuhaZQHFfRIOFLQyo_6Snw57z3k9GclXuw-sqdpcjOllS2qThuD7dYUFM-oz4k502gPOe5dfrMI9qTQ7mxRaE8KLbS2KCyZz-_rHXs3jdnNPvK_oDKmA6VP3LczR-XXY1Fm2UeaPYWYizkbUvzPlb_7AIYf</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Lee, Sueng Min</creator><creator>Kim, Jin Young</creator><creator>Yu, Chong Gun</creator><creator>Park, Jong Tae</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20130101</creationdate><title>A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs</title><author>Lee, Sueng Min ; Kim, Jin Young ; Yu, Chong Gun ; Park, Jong Tae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c459t-79ba6a2b903ea7325113136cd3bb41817c35ad522e919b552c02d3fe1fed32cf3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>Degradation</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>Hot-carrier effects</topic><topic>Inversion-mode transistor</topic><topic>Junctionless transistor</topic><topic>Multiple-gate MOSFET</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Stresses</topic><topic>Transistors</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lee, Sueng Min</creatorcontrib><creatorcontrib>Kim, Jin Young</creatorcontrib><creatorcontrib>Yu, Chong Gun</creatorcontrib><creatorcontrib>Park, Jong Tae</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lee, Sueng Min</au><au>Kim, Jin Young</au><au>Yu, Chong Gun</au><au>Park, Jong Tae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs</atitle><jtitle>Solid-state electronics</jtitle><date>2013-01-01</date><risdate>2013</risdate><volume>79</volume><spage>253</spage><epage>257</epage><pages>253-257</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>► Investigation of hot carrier effects in inversion mode and junctionless transistors. ► Device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. ► Device degradation is more significant in IM transistor than in IM transistor at high stress gate voltage.
A comparative study on the hot-carrier degradation between inversion mode and junctionless n-channel multiple gate MOSFET has been performed experimentally. The device degradation is more significant in JL transistor than in IM transistor at low stress gate voltage. However, this trend is reversed at high stress gate voltage. The highest degradation rate is found to occur at VG=VFB in JL transistors and at classical stress bias conditions (VG=VD/2) in IM transistor. 3-Dimensional device simulation is used to explain the observed results.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2012.07.001</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1101 |
| ispartof | Solid-state electronics, 2013-01, Vol.79, p.253-257 |
| issn | 0038-1101 1879-2405 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1283661746 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Applied sciences Degradation Devices Electric potential Electronics Exact sciences and technology Gates Hot-carrier effects Inversion-mode transistor Junctionless transistor Multiple-gate MOSFET Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Stresses Transistors Voltage |
| title | A comparative study on hot carrier effects in inversion-mode and junctionless MuGFETs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T20%3A38%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20comparative%20study%20on%20hot%20carrier%20effects%20in%20inversion-mode%20and%20junctionless%20MuGFETs&rft.jtitle=Solid-state%20electronics&rft.au=Lee,%20Sueng%20Min&rft.date=2013-01-01&rft.volume=79&rft.spage=253&rft.epage=257&rft.pages=253-257&rft.issn=0038-1101&rft.eissn=1879-2405&rft_id=info:doi/10.1016/j.sse.2012.07.001&rft_dat=%3Cproquest_cross%3E1283661746%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1283661746&rft_id=info:pmid/&rft_els_id=S0038110112002328&rfr_iscdi=true |