An equivalent doping profile for CMOS substrate characterization
► Work shows a method to obtain equivalent doping profiles of CMOS substrates. ► Based on resistive measurements at different temperatures and 3D simulations. ► Enables foundries to provide box distribution profiles for CMOS circuit design. ► Enables the development of analytical impedance model, su...
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| Veröffentlicht in: | Solid-state electronics 2013-01, Vol.79, p.185-191 |
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| container_title | Solid-state electronics |
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| creator | Quaresma, Henrique J. Mendonça dos Santos, P. Cruz Serra, A. |
| description | ► Work shows a method to obtain equivalent doping profiles of CMOS substrates. ► Based on resistive measurements at different temperatures and 3D simulations. ► Enables foundries to provide box distribution profiles for CMOS circuit design. ► Enables the development of analytical impedance model, suitable to EDA tools.
This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance. |
| doi_str_mv | 10.1016/j.sse.2012.06.017 |
| format | Article |
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This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2012.06.017</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Applied sciences ; CMOS ; CMOS technology ; Design. Technologies. Operation analysis. Testing ; Doping ; Electronics ; Equivalence ; Estimates ; Exact sciences and technology ; Integrated circuits ; Inverse modelling ; Methodology ; Nondestructive testing ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Substrate characterization ; Testing, measurement, noise and reliability ; Three dimensional</subject><ispartof>Solid-state electronics, 2013-01, Vol.79, p.185-191</ispartof><rights>2012 Elsevier Ltd</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c393t-ce14da85de813c58730179dbaf4bea1cff99ef61fd5e899150aae2fcb034ea003</citedby><cites>FETCH-LOGICAL-c393t-ce14da85de813c58730179dbaf4bea1cff99ef61fd5e899150aae2fcb034ea003</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110112002316$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26680218$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Quaresma, Henrique J.</creatorcontrib><creatorcontrib>Mendonça dos Santos, P.</creatorcontrib><creatorcontrib>Cruz Serra, A.</creatorcontrib><title>An equivalent doping profile for CMOS substrate characterization</title><title>Solid-state electronics</title><description>► Work shows a method to obtain equivalent doping profiles of CMOS substrates. ► Based on resistive measurements at different temperatures and 3D simulations. ► Enables foundries to provide box distribution profiles for CMOS circuit design. ► Enables the development of analytical impedance model, suitable to EDA tools.
This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance.</description><subject>Applied sciences</subject><subject>CMOS</subject><subject>CMOS technology</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Doping</subject><subject>Electronics</subject><subject>Equivalence</subject><subject>Estimates</subject><subject>Exact sciences and technology</subject><subject>Integrated circuits</subject><subject>Inverse modelling</subject><subject>Methodology</subject><subject>Nondestructive testing</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Substrate characterization</subject><subject>Testing, measurement, noise and reliability</subject><subject>Three dimensional</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kD1PwzAQhi0EEqXwA9iyILEk3DlN6ogFVPElFXUAZuvqnMFVmrR2Wgl-Pa5aMTLd8tx7z71CXCJkCFjeLLIQOJOAMoMyAxwfiQGqcZXKERTHYgCQqxQjeirOQlgAgCwRBuLuvk14vXFbarjtk7pbufYzWfnOuoYT2_lk8jp7S8JmHnpPPSfmizyZnr37od517bk4sdQEvjjMofh4fHifPKfT2dPL5H6amrzK-9QwjmpSRc0Kc1OocR4dq3pOdjRnQmNtVbEt0dYFq6rCAohYWjOHfMQU7Yfiep8b3dYbDr1eumC4aajlbhM0SpWXhZLjKqK4R43vQvBs9cq7JflvjaB3bemFjm3pXVsaSh1N4s7VIZ6CocZ6ao0Lf4uyLBVIVJG73XMcf9069joYx63h2nk2va4798-VXx5wgAU</recordid><startdate>20130101</startdate><enddate>20130101</enddate><creator>Quaresma, Henrique J.</creator><creator>Mendonça dos Santos, P.</creator><creator>Cruz Serra, A.</creator><general>Elsevier Ltd</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20130101</creationdate><title>An equivalent doping profile for CMOS substrate characterization</title><author>Quaresma, Henrique J. ; Mendonça dos Santos, P. ; Cruz Serra, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c393t-ce14da85de813c58730179dbaf4bea1cff99ef61fd5e899150aae2fcb034ea003</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Applied sciences</topic><topic>CMOS</topic><topic>CMOS technology</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Doping</topic><topic>Electronics</topic><topic>Equivalence</topic><topic>Estimates</topic><topic>Exact sciences and technology</topic><topic>Integrated circuits</topic><topic>Inverse modelling</topic><topic>Methodology</topic><topic>Nondestructive testing</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Substrate characterization</topic><topic>Testing, measurement, noise and reliability</topic><topic>Three dimensional</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Quaresma, Henrique J.</creatorcontrib><creatorcontrib>Mendonça dos Santos, P.</creatorcontrib><creatorcontrib>Cruz Serra, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Quaresma, Henrique J.</au><au>Mendonça dos Santos, P.</au><au>Cruz Serra, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An equivalent doping profile for CMOS substrate characterization</atitle><jtitle>Solid-state electronics</jtitle><date>2013-01-01</date><risdate>2013</risdate><volume>79</volume><spage>185</spage><epage>191</epage><pages>185-191</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>► Work shows a method to obtain equivalent doping profiles of CMOS substrates. ► Based on resistive measurements at different temperatures and 3D simulations. ► Enables foundries to provide box distribution profiles for CMOS circuit design. ► Enables the development of analytical impedance model, suitable to EDA tools.
This work presents a non-destructive methodology to accurately estimate an equivalent substrate doping profile of a typical CMOS process. The methodology is based on simple experimental resistive measurements at different temperatures, obtained from a set of basic integrated test structures, and in 3D semiconductor simulations, to compute an estimate for the unknown CMOS process parameters. It is demonstrated that the resultant box distribution equivalent doping profile could be used to evaluate the variation of the substrate impedance as a function of temperature and substrate contact distance.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2012.06.017</doi><tpages>7</tpages></addata></record> |
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| ispartof | Solid-state electronics, 2013-01, Vol.79, p.185-191 |
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| subjects | Applied sciences CMOS CMOS technology Design. Technologies. Operation analysis. Testing Doping Electronics Equivalence Estimates Exact sciences and technology Integrated circuits Inverse modelling Methodology Nondestructive testing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Substrate characterization Testing, measurement, noise and reliability Three dimensional |
| title | An equivalent doping profile for CMOS substrate characterization |
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