Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application
► The structure is studied by in situ Rs measurement and X-ray diffraction method. ► The grain size has been refined significantly by the doping of nitrogen atoms. ► A complete crystallization of the device is realized in the I–V sweeping process. Nitrogen-doped Ge2Sb2Te5 thin film is proposed to pr...
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| Veröffentlicht in: | Solid-state electronics 2013-01, Vol.79, p.138-141 |
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| creator | Yao, Dongning Zhou, Xilin Wu, Liangcai Song, Zhitang Cheng, Limin Rao, Feng Liu, Bo Feng, Songlin |
| description | ► The structure is studied by in situ Rs measurement and X-ray diffraction method. ► The grain size has been refined significantly by the doping of nitrogen atoms. ► A complete crystallization of the device is realized in the I–V sweeping process.
Nitrogen-doped Ge2Sb2Te5 thin film is proposed to present the feasibility for electrical phase-change memory application. The effect of nitrogen doping on the structure is studied by in situ sheet resistance measurement and X-ray diffraction method. The temperature upon crystallization from amorphous to cubic structure is increased by nitrogen addition, while the phase transformation to hexagonal phase occurs at a lower temperature compared with the nitrogen-free Ge2Sb2Te5 material. The X-ray diffraction test reveals that the grain size has been refined significantly by the incorporation of nitrogen atoms in the film. Phase-change memory device based on nitrogen incorporated Ge2Sb2Te5 material is fabricated using complementary metal oxide semiconductor technology. A complete crystallization of the phase-change cell is realized in the current–voltage sweeping process. Nitrogen-doped Ge2Sb2Te5 with higher sheet resistance in the crystalline state is favored for phase-change memory application due to the decreased reset voltage and promoted resistance ratio of the reset and set states. |
| doi_str_mv | 10.1016/j.sse.2012.07.020 |
| format | Article |
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Nitrogen-doped Ge2Sb2Te5 thin film is proposed to present the feasibility for electrical phase-change memory application. The effect of nitrogen doping on the structure is studied by in situ sheet resistance measurement and X-ray diffraction method. The temperature upon crystallization from amorphous to cubic structure is increased by nitrogen addition, while the phase transformation to hexagonal phase occurs at a lower temperature compared with the nitrogen-free Ge2Sb2Te5 material. The X-ray diffraction test reveals that the grain size has been refined significantly by the incorporation of nitrogen atoms in the film. Phase-change memory device based on nitrogen incorporated Ge2Sb2Te5 material is fabricated using complementary metal oxide semiconductor technology. A complete crystallization of the phase-change cell is realized in the current–voltage sweeping process. Nitrogen-doped Ge2Sb2Te5 with higher sheet resistance in the crystalline state is favored for phase-change memory application due to the decreased reset voltage and promoted resistance ratio of the reset and set states.</description><identifier>ISSN: 0038-1101</identifier><identifier>EISSN: 1879-2405</identifier><identifier>DOI: 10.1016/j.sse.2012.07.020</identifier><language>eng</language><publisher>Kidlington: Elsevier Ltd</publisher><subject>Amorphous materials ; Applied sciences ; Crystallization ; Data storage ; Design. Technologies. Operation analysis. Testing ; Diffraction ; Electrical resistivity ; Electrical switching ; Electronics ; Exact sciences and technology ; Ge2Sb2Te5 ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Nitrogen atoms ; Nitrogen doping ; Phase change material ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; X-rays</subject><ispartof>Solid-state electronics, 2013-01, Vol.79, p.138-141</ispartof><rights>2012 Elsevier Ltd</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-187d4975eb1b7eadf7ba396fe9d18b3f0ab977a178586b555ef5ac2a815eaf0e3</citedby><cites>FETCH-LOGICAL-c360t-187d4975eb1b7eadf7ba396fe9d18b3f0ab977a178586b555ef5ac2a815eaf0e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0038110112002614$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,4010,27900,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26680210$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Yao, Dongning</creatorcontrib><creatorcontrib>Zhou, Xilin</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Cheng, Limin</creatorcontrib><creatorcontrib>Rao, Feng</creatorcontrib><creatorcontrib>Liu, Bo</creatorcontrib><creatorcontrib>Feng, Songlin</creatorcontrib><title>Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application</title><title>Solid-state electronics</title><description>► The structure is studied by in situ Rs measurement and X-ray diffraction method. ► The grain size has been refined significantly by the doping of nitrogen atoms. ► A complete crystallization of the device is realized in the I–V sweeping process.
Nitrogen-doped Ge2Sb2Te5 thin film is proposed to present the feasibility for electrical phase-change memory application. The effect of nitrogen doping on the structure is studied by in situ sheet resistance measurement and X-ray diffraction method. The temperature upon crystallization from amorphous to cubic structure is increased by nitrogen addition, while the phase transformation to hexagonal phase occurs at a lower temperature compared with the nitrogen-free Ge2Sb2Te5 material. The X-ray diffraction test reveals that the grain size has been refined significantly by the incorporation of nitrogen atoms in the film. Phase-change memory device based on nitrogen incorporated Ge2Sb2Te5 material is fabricated using complementary metal oxide semiconductor technology. A complete crystallization of the phase-change cell is realized in the current–voltage sweeping process. Nitrogen-doped Ge2Sb2Te5 with higher sheet resistance in the crystalline state is favored for phase-change memory application due to the decreased reset voltage and promoted resistance ratio of the reset and set states.</description><subject>Amorphous materials</subject><subject>Applied sciences</subject><subject>Crystallization</subject><subject>Data storage</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Diffraction</subject><subject>Electrical resistivity</subject><subject>Electrical switching</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Ge2Sb2Te5</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Nitrogen atoms</subject><subject>Nitrogen doping</subject><subject>Phase change material</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Technologies. Operation analysis. Testing</topic><topic>Diffraction</topic><topic>Electrical resistivity</topic><topic>Electrical switching</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Ge2Sb2Te5</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Nitrogen atoms</topic><topic>Nitrogen doping</topic><topic>Phase change material</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yao, Dongning</creatorcontrib><creatorcontrib>Zhou, Xilin</creatorcontrib><creatorcontrib>Wu, Liangcai</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Cheng, Limin</creatorcontrib><creatorcontrib>Rao, Feng</creatorcontrib><creatorcontrib>Liu, Bo</creatorcontrib><creatorcontrib>Feng, Songlin</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yao, Dongning</au><au>Zhou, Xilin</au><au>Wu, Liangcai</au><au>Song, Zhitang</au><au>Cheng, Limin</au><au>Rao, Feng</au><au>Liu, Bo</au><au>Feng, Songlin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application</atitle><jtitle>Solid-state electronics</jtitle><date>2013-01</date><risdate>2013</risdate><volume>79</volume><spage>138</spage><epage>141</epage><pages>138-141</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>► The structure is studied by in situ Rs measurement and X-ray diffraction method. ► The grain size has been refined significantly by the doping of nitrogen atoms. ► A complete crystallization of the device is realized in the I–V sweeping process.
Nitrogen-doped Ge2Sb2Te5 thin film is proposed to present the feasibility for electrical phase-change memory application. The effect of nitrogen doping on the structure is studied by in situ sheet resistance measurement and X-ray diffraction method. The temperature upon crystallization from amorphous to cubic structure is increased by nitrogen addition, while the phase transformation to hexagonal phase occurs at a lower temperature compared with the nitrogen-free Ge2Sb2Te5 material. The X-ray diffraction test reveals that the grain size has been refined significantly by the incorporation of nitrogen atoms in the film. Phase-change memory device based on nitrogen incorporated Ge2Sb2Te5 material is fabricated using complementary metal oxide semiconductor technology. A complete crystallization of the phase-change cell is realized in the current–voltage sweeping process. Nitrogen-doped Ge2Sb2Te5 with higher sheet resistance in the crystalline state is favored for phase-change memory application due to the decreased reset voltage and promoted resistance ratio of the reset and set states.</abstract><cop>Kidlington</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2012.07.020</doi><tpages>4</tpages></addata></record> |
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| subjects | Amorphous materials Applied sciences Crystallization Data storage Design. Technologies. Operation analysis. Testing Diffraction Electrical resistivity Electrical switching Electronics Exact sciences and technology Ge2Sb2Te5 Integrated circuits Integrated circuits by function (including memories and processors) Nitrogen atoms Nitrogen doping Phase change material Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices X-rays |
| title | Investigation on nitrogen-doped Ge2Sb2Te5 material for phase-change memory application |
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