The dependence of barrier height on temperature for Pd Schottky contacts on ZnO

Temperature dependent current–voltage ( I– V) and capacitance–voltage ( C– V) measurements have been performed on Pd/ZnO Schottky barrier diodes in the range 60–300 K. The room temperature values for the zero bias barrier height from the I– V measurements ( Φ I–V ) was found to be 0.52 eV and from t...

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