Selective area crystallization of amorphous silicon using micro-patterned SiO sub(2) capping layer

We have investigated a new crystallization technique using selective area heating (SAH) with a micro-patterned SiO sub(2) capping layer. The purpose of SAH is to improve performance of amorphous silicon films in the presence of glass substrates with extremely low thermal budgets. The glass substrate...

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Veröffentlicht in:	Journal of crystal growth 2010-08, Vol.312 (16-17), p.2335-2338
Hauptverfasser:	Kim, Do Kyung, Jeong, Woong Hee, Bae, Jung Hyeon, Hwang, Tae Hyung, Roh, Nam Seok, Kim, Hyun Jae
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon Capping Crystallinity Crystallization Glass Heaters Silicon dioxide Thermal energy
Online-Zugang:	Volltext
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