The effect of vacuum annealing on graphene

The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 1013 cm−2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the...

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Veröffentlicht in:	Journal of Raman spectroscopy 2010-05, Vol.41 (5), p.479-483
Hauptverfasser:	Ni, Zhen Hua, Wang, Hao Min, Luo, Zhi Qiang, Wang, Ying Ying, Yu, Ting, Wu, Yi Hong, Shen, Ze Xiang
Format:	Artikel
Sprache:	eng
Schlagworte:	Adsorption Annealing Doping Electronic devices Gas sensors Graphene Raman spectroscopy Vacuum annealing
Online-Zugang:	Volltext
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