The effect of vacuum annealing on graphene
The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 1013 cm−2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the...
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| Veröffentlicht in: | Journal of Raman spectroscopy 2010-05, Vol.41 (5), p.479-483 |
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| container_issue | 5 |
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| container_title | Journal of Raman spectroscopy |
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| creator | Ni, Zhen Hua Wang, Hao Min Luo, Zhi Qiang Wang, Ying Ying Yu, Ting Wu, Yi Hong Shen, Ze Xiang |
| description | The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 1013 cm−2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H2O and O2 adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene‐based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright © 2009 John Wiley & Sons, Ltd.
The effect of vacuum annealing on the properties of graphene is investigated by Raman spectroscopy and electrical measurement. Heavy hole doping on graphene is observed after vacuum annealing and exposed to an air ambient, which might be due to the H2O and O2 adsorption. Graphene is believed to be more active to molecular adsorption after annealing. |
| doi_str_mv | 10.1002/jrs.2485 |
| format | Article |
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The effect of vacuum annealing on the properties of graphene is investigated by Raman spectroscopy and electrical measurement. Heavy hole doping on graphene is observed after vacuum annealing and exposed to an air ambient, which might be due to the H2O and O2 adsorption. Graphene is believed to be more active to molecular adsorption after annealing.</description><identifier>ISSN: 0377-0486</identifier><identifier>EISSN: 1097-4555</identifier><identifier>DOI: 10.1002/jrs.2485</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>Adsorption ; Annealing ; Doping ; Electronic devices ; Gas sensors ; Graphene ; Raman spectroscopy ; Vacuum annealing</subject><ispartof>Journal of Raman spectroscopy, 2010-05, Vol.41 (5), p.479-483</ispartof><rights>Copyright © 2009 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4025-3d4af9ee7864efb8bfbc133043bc1082cb549cfa1e4aca29452184e5667e34233</citedby><cites>FETCH-LOGICAL-c4025-3d4af9ee7864efb8bfbc133043bc1082cb549cfa1e4aca29452184e5667e34233</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fjrs.2485$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fjrs.2485$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Ni, Zhen Hua</creatorcontrib><creatorcontrib>Wang, Hao Min</creatorcontrib><creatorcontrib>Luo, Zhi Qiang</creatorcontrib><creatorcontrib>Wang, Ying Ying</creatorcontrib><creatorcontrib>Yu, Ting</creatorcontrib><creatorcontrib>Wu, Yi Hong</creatorcontrib><creatorcontrib>Shen, Ze Xiang</creatorcontrib><title>The effect of vacuum annealing on graphene</title><title>Journal of Raman spectroscopy</title><addtitle>J. Raman Spectrosc</addtitle><description>The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 1013 cm−2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H2O and O2 adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene‐based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright © 2009 John Wiley & Sons, Ltd.
The effect of vacuum annealing on the properties of graphene is investigated by Raman spectroscopy and electrical measurement. Heavy hole doping on graphene is observed after vacuum annealing and exposed to an air ambient, which might be due to the H2O and O2 adsorption. Graphene is believed to be more active to molecular adsorption after annealing.</description><subject>Adsorption</subject><subject>Annealing</subject><subject>Doping</subject><subject>Electronic devices</subject><subject>Gas sensors</subject><subject>Graphene</subject><subject>Raman spectroscopy</subject><subject>Vacuum annealing</subject><issn>0377-0486</issn><issn>1097-4555</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp10EtLw0AUhuFBFKxV8CdkKULqXDOTpbRaL0VBI0I3w2Q806amSZ1J1P57UyqiC1ff5uHAeRE6JnhAMKZnCx8GlCuxg3oEpzLmQohd1MNMyhhzleyjgxAWGOM0TUgPnWZziMA5sE1Uu-jd2LZdRqaqwJRFNYvqKpp5s5pDBYdoz5kywNH39tHT5UU2vIon9-Pr4fkkthxTEbMXblwKIFXCweUqd7kljGHOusWK2lzw1DpDgBtraMoFJYqDSBIJjFPG-uhke3fl67cWQqOXRbBQlqaCug2a0I52b_2m1tcheHB65Yul8WtNsN7k0F0OvcnR0XhLP4oS1v86ffPw-NcXoYHPH2_8q04kk0I_3431VNHbLBtN9Yh9ASNHbqg</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Ni, Zhen Hua</creator><creator>Wang, Hao Min</creator><creator>Luo, Zhi Qiang</creator><creator>Wang, Ying Ying</creator><creator>Yu, Ting</creator><creator>Wu, Yi Hong</creator><creator>Shen, Ze Xiang</creator><general>John Wiley & Sons, Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201005</creationdate><title>The effect of vacuum annealing on graphene</title><author>Ni, Zhen Hua ; Wang, Hao Min ; Luo, Zhi Qiang ; Wang, Ying Ying ; Yu, Ting ; Wu, Yi Hong ; Shen, Ze Xiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4025-3d4af9ee7864efb8bfbc133043bc1082cb549cfa1e4aca29452184e5667e34233</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Adsorption</topic><topic>Annealing</topic><topic>Doping</topic><topic>Electronic devices</topic><topic>Gas sensors</topic><topic>Graphene</topic><topic>Raman spectroscopy</topic><topic>Vacuum annealing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ni, Zhen Hua</creatorcontrib><creatorcontrib>Wang, Hao Min</creatorcontrib><creatorcontrib>Luo, Zhi Qiang</creatorcontrib><creatorcontrib>Wang, Ying Ying</creatorcontrib><creatorcontrib>Yu, Ting</creatorcontrib><creatorcontrib>Wu, Yi Hong</creatorcontrib><creatorcontrib>Shen, Ze Xiang</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Raman spectroscopy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ni, Zhen Hua</au><au>Wang, Hao Min</au><au>Luo, Zhi Qiang</au><au>Wang, Ying Ying</au><au>Yu, Ting</au><au>Wu, Yi Hong</au><au>Shen, Ze Xiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of vacuum annealing on graphene</atitle><jtitle>Journal of Raman spectroscopy</jtitle><addtitle>J. Raman Spectrosc</addtitle><date>2010-05</date><risdate>2010</risdate><volume>41</volume><issue>5</issue><spage>479</spage><epage>483</epage><pages>479-483</pages><issn>0377-0486</issn><eissn>1097-4555</eissn><abstract>The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 1013 cm−2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H2O and O2 adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene‐based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright © 2009 John Wiley & Sons, Ltd.
The effect of vacuum annealing on the properties of graphene is investigated by Raman spectroscopy and electrical measurement. Heavy hole doping on graphene is observed after vacuum annealing and exposed to an air ambient, which might be due to the H2O and O2 adsorption. Graphene is believed to be more active to molecular adsorption after annealing.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/jrs.2485</doi><tpages>5</tpages></addata></record> |
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| ispartof | Journal of Raman spectroscopy, 2010-05, Vol.41 (5), p.479-483 |
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| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | Adsorption Annealing Doping Electronic devices Gas sensors Graphene Raman spectroscopy Vacuum annealing |
| title | The effect of vacuum annealing on graphene |
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