Effect of illumination intensity on cell parameters of a silicon solar cell
The effect of illumination intensity P in on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the I–V curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been...
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| Veröffentlicht in: | Solar energy materials and solar cells 2010-09, Vol.94 (9), p.1473-1476 |
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| container_title | Solar energy materials and solar cells |
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| creator | Khan, Firoz Singh, S.N. Husain, M. |
| description | The effect of illumination intensity
P
in
on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the
I–V curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance
R
sh
, series resistance
R
s
, diode ideality factor
n and reverse saturation current
I
0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15–180
mW/cm
2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the
I–V curves at short circuit and open circuit conditions. Initially
R
sh
increases slightly with
P
in
and then becomes constant at higher
P
in
values. However,
R
s
,
n and
I
0 all decrease continuously with
P
in
, but the rate of decrease of each of these becomes smaller at higher
P
in
values. Theoretical values of open circuit voltage
V
oc
, curve factor CF and efficiency
η calculated using the cell parameters determined by the present method match well with the corresponding experimental values. |
| doi_str_mv | 10.1016/j.solmat.2010.03.018 |
| format | Article |
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P
in
on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the
I–V curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance
R
sh
, series resistance
R
s
, diode ideality factor
n and reverse saturation current
I
0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15–180
mW/cm
2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the
I–V curves at short circuit and open circuit conditions. Initially
R
sh
increases slightly with
P
in
and then becomes constant at higher
P
in
values. However,
R
s
,
n and
I
0 all decrease continuously with
P
in
, but the rate of decrease of each of these becomes smaller at higher
P
in
values. Theoretical values of open circuit voltage
V
oc
, curve factor CF and efficiency
η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.</description><identifier>ISSN: 0927-0248</identifier><identifier>EISSN: 1879-3398</identifier><identifier>DOI: 10.1016/j.solmat.2010.03.018</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Applied sciences ; Cell parameters ; Diode ideality factor ; Diodes ; Energy ; Exact sciences and technology ; Illumination ; Mathematical models ; Natural energy ; Photovoltaic cells ; Photovoltaic conversion ; Series resistance ; Short circuits ; Shunt resistance ; Silicon solar cells ; Slopes ; Solar cells ; Solar cells. Photoelectrochemical cells ; Solar energy ; Volt-ampere characteristics</subject><ispartof>Solar energy materials and solar cells, 2010-09, Vol.94 (9), p.1473-1476</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c476t-ae33c6332e48e2e2e9d7fcb1bbebb18b9c9e2ddadbfa20f448cf66d15247b2613</citedby><cites>FETCH-LOGICAL-c476t-ae33c6332e48e2e2e9d7fcb1bbebb18b9c9e2ddadbfa20f448cf66d15247b2613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.solmat.2010.03.018$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,45974</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23075844$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Khan, Firoz</creatorcontrib><creatorcontrib>Singh, S.N.</creatorcontrib><creatorcontrib>Husain, M.</creatorcontrib><title>Effect of illumination intensity on cell parameters of a silicon solar cell</title><title>Solar energy materials and solar cells</title><description>The effect of illumination intensity
P
in
on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the
I–V curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance
R
sh
, series resistance
R
s
, diode ideality factor
n and reverse saturation current
I
0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15–180
mW/cm
2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the
I–V curves at short circuit and open circuit conditions. Initially
R
sh
increases slightly with
P
in
and then becomes constant at higher
P
in
values. However,
R
s
,
n and
I
0 all decrease continuously with
P
in
, but the rate of decrease of each of these becomes smaller at higher
P
in
values. Theoretical values of open circuit voltage
V
oc
, curve factor CF and efficiency
η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.</description><subject>Applied sciences</subject><subject>Cell parameters</subject><subject>Diode ideality factor</subject><subject>Diodes</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Illumination</subject><subject>Mathematical models</subject><subject>Natural energy</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Series resistance</subject><subject>Short circuits</subject><subject>Shunt resistance</subject><subject>Silicon solar cells</subject><subject>Slopes</subject><subject>Solar cells</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>Volt-ampere characteristics</subject><issn>0927-0248</issn><issn>1879-3398</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKxDAUhoMoOI6-gYtuBDetuU2abgQZvOGAG12HND2BDGk7Jhlh3t7UDi4li5DkO_nP-RC6JrgimIi7bRVH3-tUUZyvMKswkSdoQWTdlIw18hQtcEPrElMuz9FFjFuMMRWML9Dbo7VgUjHawnm_792gkxuHwg0JhujSocgHA94XOx10DwlCnGBdROedyY85Wodf5BKdWe0jXB33Jfp8evxYv5Sb9-fX9cOmNLwWqdTAmBGMUeASaF5NV1vTkraFtiWybUwDtOt011pNseVcGitER1aU1y0VhC3R7fzvLoxfe4hJ9S5ODegBxn1UhApRc85WMqN8Rk0YYwxg1S64XoeDIlhN7tRWze7U5E5hprK7XHZzTNDRaG-DHoyLf7WU4Xolc8IS3c8c5HG_HQQVjYPBQOdCtqq60f0f9ANSpIf9</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Khan, Firoz</creator><creator>Singh, S.N.</creator><creator>Husain, M.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20100901</creationdate><title>Effect of illumination intensity on cell parameters of a silicon solar cell</title><author>Khan, Firoz ; Singh, S.N. ; Husain, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c476t-ae33c6332e48e2e2e9d7fcb1bbebb18b9c9e2ddadbfa20f448cf66d15247b2613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Cell parameters</topic><topic>Diode ideality factor</topic><topic>Diodes</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Illumination</topic><topic>Mathematical models</topic><topic>Natural energy</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>Series resistance</topic><topic>Short circuits</topic><topic>Shunt resistance</topic><topic>Silicon solar cells</topic><topic>Slopes</topic><topic>Solar cells</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>Volt-ampere characteristics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khan, Firoz</creatorcontrib><creatorcontrib>Singh, S.N.</creatorcontrib><creatorcontrib>Husain, M.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solar energy materials and solar cells</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khan, Firoz</au><au>Singh, S.N.</au><au>Husain, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of illumination intensity on cell parameters of a silicon solar cell</atitle><jtitle>Solar energy materials and solar cells</jtitle><date>2010-09-01</date><risdate>2010</risdate><volume>94</volume><issue>9</issue><spage>1473</spage><epage>1476</epage><pages>1473-1476</pages><issn>0927-0248</issn><eissn>1879-3398</eissn><abstract>The effect of illumination intensity
P
in
on the cell parameters of a silicon solar cell has been investigated based on one diode model. The variation of slopes of the
I–V curves of a cell at short circuit and open circuit conditions with intensity of illumination in small span of intensity has been applied to determine the cell parameters, viz. shunt resistance
R
sh
, series resistance
R
s
, diode ideality factor
n and reverse saturation current
I
0 of the cell. The dependence of cell parameters on intensity has been investigated for a fairly wide illumination intensity range 15–180
mW/cm
2 of AM1.5 solar radiations by dividing this intensity range into a desirable number of small intensity ranges for measurements of the slopes of the
I–V curves at short circuit and open circuit conditions. Initially
R
sh
increases slightly with
P
in
and then becomes constant at higher
P
in
values. However,
R
s
,
n and
I
0 all decrease continuously with
P
in
, but the rate of decrease of each of these becomes smaller at higher
P
in
values. Theoretical values of open circuit voltage
V
oc
, curve factor CF and efficiency
η calculated using the cell parameters determined by the present method match well with the corresponding experimental values.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.solmat.2010.03.018</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0927-0248 |
| ispartof | Solar energy materials and solar cells, 2010-09, Vol.94 (9), p.1473-1476 |
| issn | 0927-0248 1879-3398 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1266744358 |
| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Cell parameters Diode ideality factor Diodes Energy Exact sciences and technology Illumination Mathematical models Natural energy Photovoltaic cells Photovoltaic conversion Series resistance Short circuits Shunt resistance Silicon solar cells Slopes Solar cells Solar cells. Photoelectrochemical cells Solar energy Volt-ampere characteristics |
| title | Effect of illumination intensity on cell parameters of a silicon solar cell |
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