Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements

In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The ( I–V) –T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demons...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2010-09, Vol.405 (17), p.3745-3750
Hauptverfasser: Harrabi, Z., Jomni, S., Beji, L., Bouazizi, A.
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Sprache:eng
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