Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements
In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The ( I–V) –T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demons...
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| Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2010-09, Vol.405 (17), p.3745-3750 |
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| creator | Harrabi, Z. Jomni, S. Beji, L. Bouazizi, A. |
| description | In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (
I–V)
–T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (
I–V)
–T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential
Φ
b
0
¯
of about 0.67 and 0.54
V and standard deviations
σ
s
2
of about 8.4×10
−3 and 4.2×10
−3
V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2
A
cm
−2
K
−2) of
p-type GaAs and the mean barrier height
Φ
b
0
¯
is closed to the band gap of GaAs. The obtained values prove that the
I–V–T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights. |
| doi_str_mv | 10.1016/j.physb.2010.05.079 |
| format | Article |
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I–V)
–T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (
I–V)
–T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential
Φ
b
0
¯
of about 0.67 and 0.54
V and standard deviations
σ
s
2
of about 8.4×10
−3 and 4.2×10
−3
V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2
A
cm
−2
K
−2) of
p-type GaAs and the mean barrier height
Φ
b
0
¯
is closed to the band gap of GaAs. The obtained values prove that the
I–V–T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2010.05.079</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Barriers ; Condensed matter ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Current–voltage characteristics ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Gold ; Mathematical analysis ; Normal distribution ; Physics ; Porous GaAs ; Schottky contact ; Standard deviation ; Surface double layers, schottky barriers, and work functions</subject><ispartof>Physica. B, Condensed matter, 2010-09, Vol.405 (17), p.3745-3750</ispartof><rights>2010 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c296t-4edc110c43924a841b9c8042487a382d714ce12b356cc8395b07379710f04f043</citedby><cites>FETCH-LOGICAL-c296t-4edc110c43924a841b9c8042487a382d714ce12b356cc8395b07379710f04f043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.physb.2010.05.079$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3549,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23060711$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Harrabi, Z.</creatorcontrib><creatorcontrib>Jomni, S.</creatorcontrib><creatorcontrib>Beji, L.</creatorcontrib><creatorcontrib>Bouazizi, A.</creatorcontrib><title>Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements</title><title>Physica. B, Condensed matter</title><description>In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (
I–V)
–T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (
I–V)
–T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential
Φ
b
0
¯
of about 0.67 and 0.54
V and standard deviations
σ
s
2
of about 8.4×10
−3 and 4.2×10
−3
V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2
A
cm
−2
K
−2) of
p-type GaAs and the mean barrier height
Φ
b
0
¯
is closed to the band gap of GaAs. The obtained values prove that the
I–V–T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.</description><subject>Barriers</subject><subject>Condensed matter</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Current–voltage characteristics</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Gold</subject><subject>Mathematical analysis</subject><subject>Normal distribution</subject><subject>Physics</subject><subject>Porous GaAs</subject><subject>Schottky contact</subject><subject>Standard deviation</subject><subject>Surface double layers, schottky barriers, and work functions</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kMFu1DAQQCMEEtvCF3DxpRKXbD22EyeHHlZtKUiVOABny3EmXS9JHDxOpb3xD_whX4LLVhwZjTSW9WZG84riHfAtcKgvD9tlf6RuK3j-4dWW6_ZFsYFGy1KArF4WG94KKFUl6tfFGdGB5wANm4JuPKXouzX5MLMwsM7G6DGyPfqHfSLmZ7ZbL5cQw0rszu6IfXH7kNL3I-t96JHYEMPE3Bojzun3z1-PYUz2AfMr4bRgtGmNyCa0lOuUGXpTvBrsSPj2uZ4X3z7cfr3-WN5_vvt0vbsvnWjrVCrsHQB3SrZC2UZB17qGK6EabWUjeg3KIYhOVrVzjWyrjmupWw184CqnPC_en-YuMfxYkZKZPDkcRztjvsaAqGutJOgqo_KEuhiIIg5miX6y8WiAmyfF5mD-KjZPig2vTFacuy6eF1hydhyinZ2nf61C8pprgMxdnTjM1z5mu4acx9lh7yO6ZPrg_7vnD2uKlg0</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Harrabi, Z.</creator><creator>Jomni, S.</creator><creator>Beji, L.</creator><creator>Bouazizi, A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20100901</creationdate><title>Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements</title><author>Harrabi, Z. ; Jomni, S. ; Beji, L. ; Bouazizi, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c296t-4edc110c43924a841b9c8042487a382d714ce12b356cc8395b07379710f04f043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Barriers</topic><topic>Condensed matter</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Current–voltage characteristics</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Gold</topic><topic>Mathematical analysis</topic><topic>Normal distribution</topic><topic>Physics</topic><topic>Porous GaAs</topic><topic>Schottky contact</topic><topic>Standard deviation</topic><topic>Surface double layers, schottky barriers, and work functions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harrabi, Z.</creatorcontrib><creatorcontrib>Jomni, S.</creatorcontrib><creatorcontrib>Beji, L.</creatorcontrib><creatorcontrib>Bouazizi, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Harrabi, Z.</au><au>Jomni, S.</au><au>Beji, L.</au><au>Bouazizi, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2010-09-01</date><risdate>2010</risdate><volume>405</volume><issue>17</issue><spage>3745</spage><epage>3750</epage><pages>3745-3750</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (
I–V)
–T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (
I–V)
–T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential
Φ
b
0
¯
of about 0.67 and 0.54
V and standard deviations
σ
s
2
of about 8.4×10
−3 and 4.2×10
−3
V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2
A
cm
−2
K
−2) of
p-type GaAs and the mean barrier height
Φ
b
0
¯
is closed to the band gap of GaAs. The obtained values prove that the
I–V–T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2010.05.079</doi><tpages>6</tpages></addata></record> |
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| subjects | Barriers Condensed matter Condensed matter: electronic structure, electrical, magnetic, and optical properties Current–voltage characteristics Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Gallium arsenide Gallium arsenides Gold Mathematical analysis Normal distribution Physics Porous GaAs Schottky contact Standard deviation Surface double layers, schottky barriers, and work functions |
| title | Distribution of barrier heights in Au/porous GaAs Schottky diodes from current–voltage–temperature measurements |
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