Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories
A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted a...
Gespeichert in:
Veröffentlicht in: | Journal of Raman spectroscopy 2010-04, Vol.41 (4), p.406-413 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 413 |
---|---|
container_issue | 4 |
container_start_page | 406 |
container_title | Journal of Raman spectroscopy |
container_volume | 41 |
creator | Fazzi, Daniele Canesi, Eleonora Valeria Bertarelli, Chiara Castiglioni, Chiara Negri, Fabrizia Zerbi, Giuseppe |
description | A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected. The combined analysis of theoretical and experimental Raman spectra recorded in solution indicates that at room temperature a dynamical equilibrium, characterized by interconversion between the two more stable conformers (namely trans and cis), takes place and that the more populated species is the cis form. Referring to the solid phase instead, Raman spectra of single‐crystal samples show the presence of the only trans conformer, as confirmed by X‐ray measurements. Finally, Raman spectra of thin films, as those used for the memory device, were collected; samples just deposited from solution and after few hours from the deposition were analyzed. Following the evolution of selective spectroscopic Raman markers, an isomerization process from the abundant cis (as‐deposited) to the totally trans (after few hours) conformer in the solid phase was detected. These results open the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device. Copyright © 2009 John Wiley & Sons, Ltd.
A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected, thus opening the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device. |
doi_str_mv | 10.1002/jrs.2449 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1266741211</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1266741211</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3369-f038c3c00c5c6eeec0b0826f2c9f48cf0067034f8d11b231bfcbde13e09efbe73</originalsourceid><addsrcrecordid>eNp10EtLxDAUhuEgCo4X8Cdk6aZ60rRpu1TR0WFU0BGXIc2cONG2qUm9_nozKooLV4Hw8MF5CdlhsMcA0v17H_bSLKtWyIhBVSRZnuerZAS8KBLISrFONkK4B4CqEmxEhivVqo6GHvXgXdCut5rqhfJKD-jtuxqs66gzVNFhYV2_wA6TWgWc0yjsM9JWLaFqqHGeegw2fH47f6e6uNW57tk1caaJFFvnLYYtsmZUE3D7-90kNyfHs6PTZHo5Pjs6mCaac1ElBnipuQbQuRaIqKGGMhUm1ZXJSm0ARAE8M-WcsTrlrDa6niPjCBWaGgu-SXa_dnvvHp8wDLK1QWPTqA7dU5AsFaLIWMrYL9WxQvBoZO9tq_ybZCCXYWUMK5dhI02-6Eu86e1fJydX1399LIOvP175BykKXuTy9mIsz_kkFYeziRT8A3uAjGk</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1266741211</pqid></control><display><type>article</type><title>Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Fazzi, Daniele ; Canesi, Eleonora Valeria ; Bertarelli, Chiara ; Castiglioni, Chiara ; Negri, Fabrizia ; Zerbi, Giuseppe</creator><creatorcontrib>Fazzi, Daniele ; Canesi, Eleonora Valeria ; Bertarelli, Chiara ; Castiglioni, Chiara ; Negri, Fabrizia ; Zerbi, Giuseppe</creatorcontrib><description>A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected. The combined analysis of theoretical and experimental Raman spectra recorded in solution indicates that at room temperature a dynamical equilibrium, characterized by interconversion between the two more stable conformers (namely trans and cis), takes place and that the more populated species is the cis form. Referring to the solid phase instead, Raman spectra of single‐crystal samples show the presence of the only trans conformer, as confirmed by X‐ray measurements. Finally, Raman spectra of thin films, as those used for the memory device, were collected; samples just deposited from solution and after few hours from the deposition were analyzed. Following the evolution of selective spectroscopic Raman markers, an isomerization process from the abundant cis (as‐deposited) to the totally trans (after few hours) conformer in the solid phase was detected. These results open the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device. Copyright © 2009 John Wiley & Sons, Ltd.
A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected, thus opening the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device.</description><identifier>ISSN: 0377-0486</identifier><identifier>EISSN: 1097-4555</identifier><identifier>DOI: 10.1002/jrs.2449</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>Data storage ; Deposition ; DFT ; diphenyl bithiophene ; isomerization process ; Markers ; Memory devices ; Raman markers ; Raman spectra ; resistive organic memory ; Solid phases ; Spectroscopy ; Thin films</subject><ispartof>Journal of Raman spectroscopy, 2010-04, Vol.41 (4), p.406-413</ispartof><rights>Copyright © 2009 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3369-f038c3c00c5c6eeec0b0826f2c9f48cf0067034f8d11b231bfcbde13e09efbe73</citedby><cites>FETCH-LOGICAL-c3369-f038c3c00c5c6eeec0b0826f2c9f48cf0067034f8d11b231bfcbde13e09efbe73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fjrs.2449$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fjrs.2449$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Fazzi, Daniele</creatorcontrib><creatorcontrib>Canesi, Eleonora Valeria</creatorcontrib><creatorcontrib>Bertarelli, Chiara</creatorcontrib><creatorcontrib>Castiglioni, Chiara</creatorcontrib><creatorcontrib>Negri, Fabrizia</creatorcontrib><creatorcontrib>Zerbi, Giuseppe</creatorcontrib><title>Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories</title><title>Journal of Raman spectroscopy</title><addtitle>J. Raman Spectrosc</addtitle><description>A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected. The combined analysis of theoretical and experimental Raman spectra recorded in solution indicates that at room temperature a dynamical equilibrium, characterized by interconversion between the two more stable conformers (namely trans and cis), takes place and that the more populated species is the cis form. Referring to the solid phase instead, Raman spectra of single‐crystal samples show the presence of the only trans conformer, as confirmed by X‐ray measurements. Finally, Raman spectra of thin films, as those used for the memory device, were collected; samples just deposited from solution and after few hours from the deposition were analyzed. Following the evolution of selective spectroscopic Raman markers, an isomerization process from the abundant cis (as‐deposited) to the totally trans (after few hours) conformer in the solid phase was detected. These results open the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device. Copyright © 2009 John Wiley & Sons, Ltd.
A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected, thus opening the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device.</description><subject>Data storage</subject><subject>Deposition</subject><subject>DFT</subject><subject>diphenyl bithiophene</subject><subject>isomerization process</subject><subject>Markers</subject><subject>Memory devices</subject><subject>Raman markers</subject><subject>Raman spectra</subject><subject>resistive organic memory</subject><subject>Solid phases</subject><subject>Spectroscopy</subject><subject>Thin films</subject><issn>0377-0486</issn><issn>1097-4555</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp10EtLxDAUhuEgCo4X8Cdk6aZ60rRpu1TR0WFU0BGXIc2cONG2qUm9_nozKooLV4Hw8MF5CdlhsMcA0v17H_bSLKtWyIhBVSRZnuerZAS8KBLISrFONkK4B4CqEmxEhivVqo6GHvXgXdCut5rqhfJKD-jtuxqs66gzVNFhYV2_wA6TWgWc0yjsM9JWLaFqqHGeegw2fH47f6e6uNW57tk1caaJFFvnLYYtsmZUE3D7-90kNyfHs6PTZHo5Pjs6mCaac1ElBnipuQbQuRaIqKGGMhUm1ZXJSm0ARAE8M-WcsTrlrDa6niPjCBWaGgu-SXa_dnvvHp8wDLK1QWPTqA7dU5AsFaLIWMrYL9WxQvBoZO9tq_ybZCCXYWUMK5dhI02-6Eu86e1fJydX1399LIOvP175BykKXuTy9mIsz_kkFYeziRT8A3uAjGk</recordid><startdate>201004</startdate><enddate>201004</enddate><creator>Fazzi, Daniele</creator><creator>Canesi, Eleonora Valeria</creator><creator>Bertarelli, Chiara</creator><creator>Castiglioni, Chiara</creator><creator>Negri, Fabrizia</creator><creator>Zerbi, Giuseppe</creator><general>John Wiley & Sons, Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201004</creationdate><title>Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories</title><author>Fazzi, Daniele ; Canesi, Eleonora Valeria ; Bertarelli, Chiara ; Castiglioni, Chiara ; Negri, Fabrizia ; Zerbi, Giuseppe</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3369-f038c3c00c5c6eeec0b0826f2c9f48cf0067034f8d11b231bfcbde13e09efbe73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Data storage</topic><topic>Deposition</topic><topic>DFT</topic><topic>diphenyl bithiophene</topic><topic>isomerization process</topic><topic>Markers</topic><topic>Memory devices</topic><topic>Raman markers</topic><topic>Raman spectra</topic><topic>resistive organic memory</topic><topic>Solid phases</topic><topic>Spectroscopy</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fazzi, Daniele</creatorcontrib><creatorcontrib>Canesi, Eleonora Valeria</creatorcontrib><creatorcontrib>Bertarelli, Chiara</creatorcontrib><creatorcontrib>Castiglioni, Chiara</creatorcontrib><creatorcontrib>Negri, Fabrizia</creatorcontrib><creatorcontrib>Zerbi, Giuseppe</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Raman spectroscopy</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fazzi, Daniele</au><au>Canesi, Eleonora Valeria</au><au>Bertarelli, Chiara</au><au>Castiglioni, Chiara</au><au>Negri, Fabrizia</au><au>Zerbi, Giuseppe</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories</atitle><jtitle>Journal of Raman spectroscopy</jtitle><addtitle>J. Raman Spectrosc</addtitle><date>2010-04</date><risdate>2010</risdate><volume>41</volume><issue>4</issue><spage>406</spage><epage>413</epage><pages>406-413</pages><issn>0377-0486</issn><eissn>1097-4555</eissn><abstract>A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for the development of organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected. The combined analysis of theoretical and experimental Raman spectra recorded in solution indicates that at room temperature a dynamical equilibrium, characterized by interconversion between the two more stable conformers (namely trans and cis), takes place and that the more populated species is the cis form. Referring to the solid phase instead, Raman spectra of single‐crystal samples show the presence of the only trans conformer, as confirmed by X‐ray measurements. Finally, Raman spectra of thin films, as those used for the memory device, were collected; samples just deposited from solution and after few hours from the deposition were analyzed. Following the evolution of selective spectroscopic Raman markers, an isomerization process from the abundant cis (as‐deposited) to the totally trans (after few hours) conformer in the solid phase was detected. These results open the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device. Copyright © 2009 John Wiley & Sons, Ltd.
A combined theoretical and experimental Raman study is presented on a diphenyl bithiophene molecule known as a good candidate for organic nonvolatile memory devices. Spectroscopic markers suitable to distinguish the different stable conformers of the molecule have been predicted and detected, thus opening the way to the identification of the molecular isomers present in the thin film of the memory cell and finally of the active molecular species involved in the switching mechanism of the operating device.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/jrs.2449</doi><tpages>8</tpages></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0377-0486 |
ispartof | Journal of Raman spectroscopy, 2010-04, Vol.41 (4), p.406-413 |
issn | 0377-0486 1097-4555 |
language | eng |
recordid | cdi_proquest_miscellaneous_1266741211 |
source | Wiley Online Library Journals Frontfile Complete |
subjects | Data storage Deposition DFT diphenyl bithiophene isomerization process Markers Memory devices Raman markers Raman spectra resistive organic memory Solid phases Spectroscopy Thin films |
title | Raman spectroscopic characterization of a thiophene-based active material for resistive organic nonvolatile memories |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T08%3A30%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Raman%20spectroscopic%20characterization%20of%20a%20thiophene-based%20active%20material%20for%20resistive%20organic%20nonvolatile%20memories&rft.jtitle=Journal%20of%20Raman%20spectroscopy&rft.au=Fazzi,%20Daniele&rft.date=2010-04&rft.volume=41&rft.issue=4&rft.spage=406&rft.epage=413&rft.pages=406-413&rft.issn=0377-0486&rft.eissn=1097-4555&rft_id=info:doi/10.1002/jrs.2449&rft_dat=%3Cproquest_cross%3E1266741211%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1266741211&rft_id=info:pmid/&rfr_iscdi=true |