Comparison of Resist Outgassing Characterization between High Power EUV and EB
For high volume manufacturing (HVM) using extreme ultraviolet (EUV) lithography, a practical resist outgassing qualification system is required. Witness sample (WS) testing systems using electron beam (EB) or low power EUV have been proposed as candidate methods, however some issues remain on how th...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2012/06/26, Vol.25(5), pp.617-624 |
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| container_title | Journal of Photopolymer Science and Technology |
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| creator | Sugie, Norihiko Takahashi, Toshiya Katayama, Kazuhiro Takagi, Isamu Kikuchi, Yukiko Shiobara, Eishi Tanaka, Hiroyuki Inoue, Soichi Watanabe, Takeo Harada, Tetsuo Kinoshita, Hiroo |
| description | For high volume manufacturing (HVM) using extreme ultraviolet (EUV) lithography, a practical resist outgassing qualification system is required. Witness sample (WS) testing systems using electron beam (EB) or low power EUV have been proposed as candidate methods, however some issues remain on how these alternative light sources, in comparison to future high power EUV in exposure tools for HVM, will affect actual resist chemical reactions and ultimately resist outgassing. In this paper, we have investigated outgassing from resist induced optics contamination by utilizing two types of WS test systems of high power EUV and EB. A correlation between these light sources is discussed, especially focusing on the resulting chemical phenomena depending on resist material properties. |
| doi_str_mv | 10.2494/photopolymer.25.617 |
| format | Article |
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| source | Free Full-Text Journals in Chemistry; EZB Electronic Journals Library; J-STAGE |
| subjects | Chemical reactions Contamination Correlation EUV Focusing Light sources Lithography Outgassing resist Resists witness sample |
| title | Comparison of Resist Outgassing Characterization between High Power EUV and EB |
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