Effect of the very high frequency plasma with a balanced power feeding on silicon film deposition

Characteristics of very high frequency plasma produced by a balanced power feeding method were experimentally and numerically investigated by comparison with those of a conventional power feeding method. The measurement results of the plasma parameters in H2 or SiH4/H2 plasma showed that the electro...

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Veröffentlicht in:	Thin solid films 2012-11, Vol.523, p.41-45
Hauptverfasser:	Muta, Hiroshi, Mizuno, Kenta, Nishida, Satoshi, Kuribayashi, Shizuma
Format:	Artikel
Sprache:	eng
Schlagworte:	Balanced power feeding Balancing Condensed matter: structure, mechanical and thermal properties Defects and impurities: doping, implantation, distribution, concentration, etc Density Exact sciences and technology Feeding Mathematical models Microcrystalline silicon film Physical radiation effects, radiation damage Physics Plasma parameters Sheaths Silicon films Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films Very high frequencies VHF plasma
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