Engineering heavily doped silicon for broadband absorber in the terahertz regime

Highly efficient absorber is of particular importance in terahertz regime as naturally occurring materials with frequency-selective absorption in this frequency band is difficult to find. Here we present the design and characterization of a broadband terahertz absorber based on heavily Boron-doped s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Optics express 2012-11, Vol.20 (23), p.25513-25519
Hauptverfasser:	Pu, Mingbo, Wang, Min, Hu, Chenggang, Huang, Cheng, Zhao, Zeyu, Wang, Yanqin, Luo, Xiangang
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!