Tuning the built-in electric field in ferroelectric Pb(Zr(0.2)Ti(0.8))O3 films for long-term stability of single-digit nanometer inverted domains

The emergence of new technologies, such as whole genome sequencing systems, which generate a large amount of data, is requiring ultrahigh storage capacities. Due to their compactness and low power consumption, probe-based memory devices using Pb(Zr(0.2)Ti(0.8))O(3) (PZT) ferroelectric films are the...

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Veröffentlicht in:	Nano letters 2012-11, Vol.12 (11), p.5455-5463
Hauptverfasser:	Tayebi, Noureddine, Kim, Sunkook, Chen, Robert J, Tran, Quan, Franklin, Nathan, Nishi, Yoshio, Ma, Qing, Rao, Valluri
Format:	Artikel
Sprache:	eng
Schlagworte:	Electricity Electrochemistry - methods Equipment Design Genome Hydrogen - chemistry Lead - chemistry Models, Statistical Nanotechnology - methods Oxygen - chemistry Physics - methods Sequence Analysis, DNA - instrumentation Temperature Titanium - chemistry Zirconium - chemistry
Online-Zugang:	Volltext
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