A study on annealing mechanisms with different manganese contents in CuMn alloy

► We optimized concentration of Mn in CuMn alloy used as barrier layers. ► Mn concentration is one of the key factors in the semiconductor process. ► The Cu atoms in the Cu-10at.% Mn films diffused with the group of Mn atoms. ► The Mn concentration cannot be raised without limit. ► The Cu-5at.% Mn f...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of alloys and compounds 2012-11, Vol.542, p.118-123
Hauptverfasser:	Wu, Chia-Yang, Wu, Chi-Ting, Lee, Wen-Hsi, Chang, Shih-Chieh, Wang, Ying-Lang
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Barrier Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Copper Copper base alloys Cross-disciplinary physics: materials science rheology Cu–Mn alloy Diffusion Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Manganese Materials science Metals and metallic alloys Methods of deposition of films and coatings film growth and epitaxy Other nonelectronic physical properties Physical properties of thin films, nonelectronic Physics Self-formed Semiconductors Silicon dioxide Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!